• Indirect couplings between magnetic layers in a metallic half-space
  W. Baltensperger, JMMM 198-1999 (1999) 415-417
• Noncollinear magnetic orders in Fe/Cr superlattices
  M. Freyss, D. Stoeffler, and H. Dreyssé
  JMMM 81 (1997) pp. 4363-4365
• Fluctuation mechanism for biquadratic exchange coupling in magnetic multilayers
  J. C. Slonczewski
  Phys. Rev. Lett. 67, 3172-3175 (1991) ps.gz

• Magnetic anisotropies and exchange coupling in ultrathin fcc Co(001) structures
  B. Heinrich, J. F. Cochran, M. Kowalewski, J. Kirschner, Z. Celinski, A. S. Arrott, and K. Myrtle
  PRB 44, 9348-9361 (1991) ps.gz
• Bilinear and biquadratic exchange coupling in bcc Fe/Cu/Fe trilayers:
  Ferromagnetic-resonance and surface magneto-optical Kerr-effect studies
  B. Heinrich, Z. Celinski, J. F. Cochran, A. S. Arrott, K. Myrtle, S. T. Purcell
  Phys. Rev. B 47, 5077-5089 (1993) ps.gz

• S. Toscano, B. Briner, H. Hopster, M. Landolt
  JMM, 144, L6 (1992)
  Connected theoretical articles
  Hozzá kapcsolódó érdekes (főleg elméleti) cikkek:

  SCI CDE with Abstracts  (Jan 99 - Jun 99)       (D4.0)
  
   Record 1 of 8.  Megj: Letoltve, /fesi/walser.pdf ok. (Elméleti cikk)
  
  Authors: Walser-P Landolt-M Title: Heat-Induced Coupling in Multilayers with Semiconducting Spacers 
  
  Full source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 1999, Vol 199, Iss JUN, pp 412-414 Language: English Document type: Article IDS/Book
  No.: 204TE No. Related Records: 20 No. cited references: 11 No. shared references: 6 Addresses: ETH-ZURICH, LAB
  FESTKORPERPHYS, CH-8093 ZURICH, SWITZERLAND Author keywords: Semiconducting Spacers; Heat-Induced Coupling; Magnetic
  Multilayers KeyWords Plus: FE/SI MULTILAYERS; EXCHANGE Abstract: Two ferromagnetic films separated by an amorphous
  semiconducting spacer are exchange coupled across the spacer layer. The coupling is reversibly temperature dependent
  with a positive temperature coefficient. (C) 1999 Elsevier Science B.V. All rights reserved.  Cited references:
  BRINER-B-1994-PHYS-REV-LETT-V73-P340 CHAIKEN-A-1996-PHYS-REV-B-V53-P5518 DENBROEDER-FJA-1995-PHYS-REV-LETT-V75-P3026
  DEVRIES-JJ-1997-PHYS-REV-LETT-V78-P3023 FULLERTON-EE-1992-J-MAGN-MAGN-MATER-V117-PL301
  FULLERTON-EE-1996-PHYS-REV-B-V53-P5112 INOMATA-K-1995-PHYS-REV-LETT-V74-P1983
  KOHLHEPP-J-1996-J-MAGN-MAGN-MATER-V156-P261 SIEGMANN-HC-1992-J-PHYS-CONDENS-MAT-V4-P8395
  TOSCANO-S-1992-J-MAGN-MAGN-MATER-V114-PL6 WALSER-P-1998-PHYS-REV-LETT-V80-P2217
  
   Record 2 of 8.
  Authors: Moroni-EG Wolf-W Hafner-J Podloucky-R Title: Cohesive, Structural,
  and Electronic-Properties of Fe-Si Compounds Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 59, Iss 20,
  pp 12860-12871 Megj: REngeteg meresre hivatkozas!!!!!!  Language: English Document type: Article IDS/Book No.: 200ZW
  No. Related Records: 20 No. cited references: 68 No. shared references: 6 Addresses: VIENNA-TECH-UNIV, INST THEORET
  PHYS, WIEDNER HAUPTSTR 8-10 136, A-1040 VIENNA, AUSTRIA CTR-COMPUTAT-MAT-SCI, A-1060 VIENNA, AUSTRIA UNIV-VIENNA, INST
  PHYS CHEM, A-1090 VIENNA, AUSTRIA KeyWords Plus: TOTAL-ENERGY CALCULATIONS; SEMICONDUCTING IRON DISILICIDE;
  BRILLOUIN-ZONE INTEGRATIONS; WAVE BASIS-SET; BAND-STRUCTURE; ULTRASOFT PSEUDOPOTENTIALS; OPTICAL-PROPERTIES;
  MOLECULAR-DYNAMICS; LOW-TEMPERATURE; SILICIDE FILMS Abstract: Phase stability, structural, and electronic properties of
  iron silicides in the Fe3Si, FeSi, and FeSi2 compositions are investigated by first-principle density-functional
  calculations based on ultrasoft pseudopotentials and all-electron methods. Structural stabilization versus
  spin-polarization effects are discussed at the Fe3Si composition, while for epsilon-FeSi and beta-FeSi2 we investigate
  their structural properties and the corresponding semiconducting band properties. All the computed results are analyzed
  and compared to available experimental data. The stability of the bulk phases, the lattice parameters, the cohesive
  energies and magnetic properties are found to be in good agreement with experiment when using the generalized gradient
  approximations for the exchange-correlation functional. Density-functional calculations are unable to account for the
  small bulk modulus of epsilon-FeSi despite that the computed lattice constant and internal atomic positions coincide
  with the experimental results. Both full-potential and ultrasoft-pseudopotential methods confirm for beta-FeSi2 the
  indirect nature of the fundamental gap, which is attributed to a transition between Y to 0.6X Lambda being 30% smaller
  than the experimental gap. Ultrasoft pseudopotential calculations of Fe-Si magnetic phases and of various nonequilibrium
  metallic phases at the FeSi and FeSi2 composition are presented. These calculations provide nb initio information
  concerning the stabilization of metallic pseudomorphic phases via high pressures or epitaxy. [S0163-1829(99)05419-3].
  Cited references: ANTONOV-VN-1998-PHYS-REV-B-V57-P8934 BAIN-EC-1924-T-AIME-V70-P25 BLOCHL-PE-1994-PHYS-REV-B-V49-P6223
  BOST-MC-1985-J-APPL-PHYS-V58-P2696 BUSSE-H-1997-SURF-SCI-V381-P133 CASTRO-GR-1997-J-PHYS-CONDENS-MAT-V9-P1871
  CHERIEF-N-1989-APPL-PHYS-LETT-V55-P1671 CHEVRIER-J-1993-EUROPHYS-LETT-V22-P449 CHRISTENSEN-NE-1990-PHYS-REV-B-V42-P7148
  CLARK-SJ-1998-PHYS-REV-B-V58-P389 DEBOER-FR-1988-COHESION-METALS-V1 DUSAUSOY-PY-1971-ACTA-CRYSTALLOGR-B-V27-P1209
  EISEBITT-S-1994-PHYS-REV-B-V50-P8330 EPPENGA-R-1990-J-APPL-PHYS-V68-P3027 FILONOV-AB-1996-J-APPL-PHYS-V79-P7708
  FU-C-1994-PHYS-REV-B-V49-P2219 FULLERTON-E-1992-J-MAGN-MAGN-MATER-V117-PL301 GIANNINI-C-1992-PHYS-REV-B-V45-P8822
  HINAREJOS-JJ-1998-PHYS-REV-B-V57-P1414 JANSEN-HJF-1984-PHYS-REV-B-V30-P561 JARLBORG-T-1995-PHYS-REV-B-V51-P1106
  JARLBORG-T-1997-REP-PROG-PHYS-V60-P1305 KITTEL-C-1986-INTRO-SOLID-STATE-PH KLASGES-R-1997-PHYS-REV-B-V56-P801
  KOHLHEPP-J-1997-PHYS-REV-B-V55-PR696 KRESSE-G-1994-J-PHYS-CONDENS-MAT-V6-P8245 KRESSE-G-1996-COMP-MATER-SCI-V6-P15
  KRESSE-G-1996-PHYS-REV-B-V54-P1169 KUDRNOVSKY-J-1991-PHYS-REV-B-V43-P5924 LAASONEN-K-1993-PHYS-REV-B-V47-P142
  LOUIE-SG-1982-PHYS-REV-B-V26-P1738 MADER-KA-1993-PHYS-REV-B-V48-P4364 MANDRUS-D-1995-PHYS-REV-B-V51-P4763
  MATTHEISS-LF-1993-PHYS-REV-B-V47-P3114 MATTSON-JE-1993-PHYS-REV-LETT-V71-P185 MERMIN-ND-1965-PHYS-REV-V137-P1141
  MIGLIO-L-1995-APPL-PHYS-LETT-V67-P2293 MIGLIO-L-1995-PHYS-REV-B-V52-P1448 MIGLIO-L-1997-EUROPHYS-LETT-V37-P415
  MONKHORST-HJ-1976-PHYS-REV-B-V13-P5188 MORONI-EG-0000-UNPUB MORONI-EG-1997-PHYS-REV-B-V56-P5629
  MURNAGHAN-FD-1944-P-NATL-ACAD-SCI-USA-V30-P244 NICULESCU-VA-1983-J-MAGN-MAGN-MATER-V39-P223
  ONDA-N-1992-APPL-SURF-SCI-V56-P421 PAULING-L-1948-ACTA-CRYSTALLOGR-V1-P212 PAXTON-AT-1990-PHYS-REV-B-V41-P8127
  PERDEW-JP-1981-PHYS-REV-B-V23-P5048 PERDEW-JP-1992-PHYS-REV-B-V45-P244 RIZZI-A-1995-PHYS-REV-B-V51-P7780
  RUBLOFF-GW-1983-SURF-SCI-V132-P268 SAITOH-S-1981-JPN-J-APPL-PHYS-V20-P1649 TOSCANO-S-1992-J-MAGN-MAGN-MATER-V114-PL6
  TUNG-RT-1983-PHYS-REV-LETT-V50-P429 VANDERBILT-D-1990-PHYS-REV-B-V41-P7892 VILLARS-P-1985-PEARSONS-HDB-CRYSTAL
  VONBARTH-U-1972-J-PHYS-C-SOLID-STATE-V5-P1629 VONKANEL-H-1992-PHYS-REV-B-V45-P3807 VONKANEL-H-1994-PHYS-REV-B-V50-P3570
  VONKANEL-H-1996-APPL-SURF-SCI-V104-P204 WALLART-X-1993-APPL-SURF-SCI-V70-P598 WALLART-X-1994-PHYS-REV-B-V49-P5714
  WATANABE-H-1963-J-PHYS-SOC-JPN-V18-P995 WHITE-JA-1994-PHYS-REV-B-V50-P4954 WILLIAMS-AR-1982-J-APPL-PHYS-V53-P2019
  WOLF-W-1996-THESIS-U-WIEN WOOD-DM-1985-J-PHYS-A-MATH-GEN-V18-P1343 ZINOVEVA-GP-1974-PHYS-STATUS-SOLIDI-A-V23-P711
  
   Record 3 of 8.
  Authors: Miyoshi-T Matsui-T Tsuda-H Mabuchi-H Morii-K Title: Magnetic and Electric Properties of
  Mn5Ge3/Ge Nanostructured Films Full source: JOURNAL OF APPLIED PHYSICS 1999, Vol 85, Iss 8, pp 5372-5374 Language:
  English Document type: Article IDS/Book No.: 188NF No. Related Records: 18 No. cited references: 12 Addresses:
  UNIV-OSAKA-PREFECTURE, COLL ENGN, 1-1 GAKUEN CHO, OSAKA 5998531, JAPAN KeyWords Plus: MAGNETORESISTANCE; MULTILAYERS
  Abstract: We have investigated the magnetic, electric, and structural properties of Mn5Ge3/Ge nanostructured films
  produced by solid-state reaction of Mn/Ge multilayered films. The films composed of strongly uniaxially oriented Mn5Ge3
  and randomly oriented Ge were successfully produced. The average grain size of Mn5Ge3 considerably changed according to
  the discharging power (E) of the ion source: 15 nm for E = 25 W and 50 nm for E = 50 W. The temperature dependence of
  the conductivity for the E = 25 sample showed semiconductor-type behavior over all the temperature region. Whereas the E
  = 50 sample, the conduction type changed from a metallic type (low temperature) to a semiconductor type (high
  temperature) with the transition temperature T-TR = 360 K. We also observed the anomalous magnetic behavior of
  Mn5Ge3. We discuss these behaviors in conjunction with the microstructure of the annealed films. The possibility of the
  carrier-spin exchange interactions has also been studied. (C) 1999 American Institute of
  Physics. [S0021-8979(99)22208-6].  Cited references: BROWN-JL-1994-IEEE-T-COMPON-PACK-A-V17-P373
  DAUGHTON-JM-1992-THIN-SOLID-FILMS-V216-P162 FULLERTON-EE-1992-J-MAGN-MAGN-MATER-V117-PL301
  FURDYNA-JK-1988-J-APPL-PHYS-V64-P29 INOMATA-K-1995-MAT-SCI-ENG-B-SOLID-V31-P41 INOMATA-K-1995-PHYS-REV-LETT-V74-P1863
  MATSUI-T-1996-J-ALLOY-COMPD-V236-P111 MATUI-T-1992-MAT-SCI-ENG-B-FLUID-V14-P95 MATUI-T-1993-MATER-CHEM-PHYS-V36-P106
  TOSCANO-S-1992-J-MAGN-MAGN-MATER-V114-PL6 YAMADA-N-1990-J-PHYS-SOC-JPN-V59-P273 ZAETS-W-1997-APPL-PHYS-LETT-V70-P2508
  
   Record 4 of 8.
  Authors: Endo-Y Kitakami-O Shimada-Y Title: Interlayer Coupling of Fe/Si/Fe
  Trilayers with Very Thin Boundary-Layers Full source: JOURNAL OF APPLIED PHYSICS 1999, Vol 85, Iss 8, pp 5741-5743
  Language: English Document type: Article IDS/Book No.: 188NF No. Related Records: 20 No. cited references: 12 Addresses:
  TOHOKU-UNIV, SCI MEASUREMENTS RES INST, AOBA KU, 2-1-1 KATAHIRA, SENDAI, MIYAGI 9808577, JAPAN KeyWords Plus:
  MULTILAYERS; MAGNETORESISTANCE; SUPERLATTICES; DEPENDENCE Abstract: The interlayer magnetic coupling of a Fe/Si/Fe
  trilayer shows an analogous feature to that of Fe/Si superlattices. With an increase in Si layer thickness, it
  oscillates as ferromagnetic (first F), antiferromagnetic (AF), ferromagnetic (second F), and finally reaches a
  noncoupling (N) state. We have investigated interlayer coupling of Fe/Si/Fe trilayers inserting very thin (1 or 2 ML
  thick) boundary layers X (X=Ag, Ge, Fe-Si, Ta, etc.). They are expected to suppress interatomic diffusion between Fe and
  Si layers. Interlayer coupling of Fe/X/Si/X/Fe with negligible interdiffusion is simply F and changes to N as the Si
  layer thickness increases. Furthermore, Fe/Fe-Si/Fe trilayers which show coupling of first F, AF but not second F,
  reproduce second F when a Si layer is inserted in the Fe-Si spacer. These results imply that an amorphous Si spacer
  mediates ferromagnetic coupling between neighboring Fe layers while the first F and the strong AF coupling usually
  observed in Fe/Si superlattices are caused by diffused crystalline Fe-Si. (C) 1999 American Institute of
  Physics. [S0021-8979(99)45508-2].  Cited references: CHAIKEN-A-1996-PHYS-REV-B-V53-P5518
  DEVRIES-JJ-1997-PHYS-REV-LETT-V78-P3023 ENDO-Y-0000-UNPUB ENDO-Y-1997-J-MAGN-SOC-JPN-V21-P541
  ENDO-Y-1998-APPL-PHYS-LETT-V72-P495 ENDO-Y-1998-IEEE-T-MAGN-V34-P906 ENDO-Y-1999-PHYS-REV-B-V59-P4279
  FULLERTON-EE-1992-J-MAGN-MAGN-MATER-V117-PL301 FULLERTON-EE-1996-PHYS-REV-B-V53-P5112
  INOMATA-K-1995-PHYS-REV-LETT-V74-P1863 NEEL-L-1962-CR-HEBD-ACAD-SCI-V255-P1545 TOSCANO-S-1992-J-MAGN-MAGN-MATER-V114-PL6
  
   Record 5 of 8. 
  Authors: Wang-JZ Li-BZ Title: Interlayer Exchange Coupling Between 2 Ferromagnets with Finite
  Thickness Separated by a Nonmetallic Spacer Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 59, Iss 9, pp
  6383-6389 Language: English Document type: Article IDS/Book No.: 178EX No. Related Records: 20 No. cited references: 17
  Addresses: CCAST, WORLD LAB, POB 8730, BEIJING 100080, PEOPLES-R-CHINA CHINESE-ACAD-SCI, INST PHYS, BEIJING 100080,
  PEOPLES-R-CHINA CHINESE-ACAD-SCI, CTR CONDENCED MATTER PHYS, BEIJING 100080, PEOPLES-R-CHINA KeyWords Plus:
  SUPERLATTICES; MULTILAYERS; BARRIER Abstract: Interlayer exchange coupling (IEC) between two ferromagnets (FM's)
  separated by a nonmetallic spacer is analyzed theoretically within the free-electron approximation. Particular attention
  is paid to the influence of FM thickness d(FM) On IEC and the variation of Fermi energy with the alignment of two
  FM's. The results show that (I)d(FM) strongly influence the IEC such that, only when d(FM) is not large, the barrier
  height and molecular field are both small, the IEC may oscillate with the spacer thickness owing to the quantum-size
  effect; otherwise, the IEC does not oscillate, but exhibits an exponential behavior in most spacer thickness; (2) as an
  oscillatory function of d(FM) with multiple periods, the IEC has a negative nonoscillatory term, which will become zero
  when the molecular field is comparatively small; (3) the Fermi energy has little difference between the parallel and
  antiparallel alignments of the two FM's, which correlates with the IEC to some extent. Particularly, with the increasing
  of d(FM) this correlation becomes stronger. [S0163-1829(99)01409-5].  Cited references:
  BANAS-J-1992-J-MAGN-MAGN-MATER-V111-PL215 BRINER-B-1993-Z-PHYS-B-CON-MAT-V92-P137 BRINER-B-1994-PHYS-REV-LETT-V73-P340
  BRINER-B-1995-PHYS-REV-B-V51-P7303 BRUNO-P-1995-PHYS-REV-B-V52-P411 DEVRIES-JJ-1997-PHYS-REV-LETT-V78-P3023
  FOILES-CL-1994-PHYS-REV-B-V50-P6070 FULLERTON-EE-1992-J-MAGN-MAGN-MATER-V117-PL301
  FULLERTON-EE-1993-J-APPL-PHYS-V73-P6335 MATTSON-JE-1993-PHYS-REV-LETT-V71-P185 SHI-ZP-1994-EUROPHYS-LETT-V26-P473
  SLONCZEWSKI-JC-1989-PHYS-REV-B-V39-P6995 TOSCANO-S-1992-J-MAGN-MAGN-MATER-V114-PL6 XIAO-MW-1996-PHYS-REV-B-V54-P3322
  YANG-GL-1996-ACTA-PHYS-SINICA-V45-P869 ZHANG-WS-1998-PHYS-REV-B-V58-P4959 ZHANG-XD-1998-PHYS-REV-B-V57-P1090
  
   Record 6 of 8. 
  Authors: Endo-Y Kitakami-O Shimada-Y Title: Interlayer Coupling in Fe/Fe1-Xsix
  Superlattices Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 59, Iss 6, pp 4279-4286 Language: English
  Document type: Article IDS/Book No.: 168NP No. Related Records: 20 No. cited references: 28 Addresses: TOHOKU-UNIV, SCI
  MEASUREMENTS RES INST, SECT SOLID STATE ELECTRON PHYS, 2-1-1 KATAHIRA, SENDAI, MIYAGI 9808577, JAPAN KeyWords Plus:
  FE/SI MULTILAYERS; BIQUADRATIC EXCHANGE; MAGNETIC MULTILAYERS; MAGNETORESISTANCE; FERROMAGNETS; INTERFACE; SILICIDE;
  FE/CR Abstract: Interlayer coupling has been investigated for a series of Fe/Fe1-xSix (0.4 less than or equal to x less
  than or equal to 1.0) superlattices. The layer of Fe1-xSix in the lattices is ferromagnetic for x<0.5 and causes
  ferromagnetic coupling between Fe layers for all spacer thicknesses investigated here. As the Si content increases above
  x=0.5, the layer becomes nonmagnetic and simultaneously our current in the plane of the sample and current perpendicular
  to the sample plane measurements suggest that the spacer rapidly changes its conduction property from metallic to highly
  resistive. Variations of the interlayer magnetic coupling as a function of spacer layer thickness for the spacer
  compositions above x=0.5 are similar to each other; namely, with an increase of the spacer thickness the interlayer
  coupling is initially ferromagnetic, then antiferromagnetic, and finally becomes noncoupling. Moreover, the temperature
  dependence of the bilinear and biquadratic coupling constants, J(1)(T) and J(2)(T) which were obtained by numerical
  fitting, varies sensitively with x. Assuming that the conduction of the spacers ranges from metallic to insulating as x
  increases, all these coupling behaviors can be described qualitatively by the quantum interference model formalized by
  Bruno. Furthermore, we found that the coupling strength is enhanced dramatically with increase of x of
  Fe1-xSix. [S0163-1829(99)11405-X].  Cited references: BARTHELEMY-A-1990-J-APPL-PHYS-V67-P5908
  BRINER-B-1994-PHYS-REV-LETT-V73-P340 BRUNO-P-1994-J-APPL-PHYS-V76-P6972 CARLISLE-JA-1996-PHYS-REV-B-V53-P8824
  CHAIKEN-A-1996-PHYS-REV-B-V53-P5518 CHUBUNOVA-EV-1994-THIN-SOLID-FILMS-V247-P39
  CULLITY-BD-1956-ELEMENTS-XRAY-DIFFRA-P263 DEBROEDERFJA-1995-PHYS-REV-LETT-V75-P3026
  DEVRIES-JJ-1997-PHYS-REV-LETT-V78-P3023 ENDO-Y-0000-UNPUB ENDO-Y-1997-J-MAGN-SOC-JPN-V21-P541
  ENDO-Y-1998-APPL-PHYS-LETT-V72-P495 ENDO-Y-1998-IEEE-T-MAGN-V34-P906 FUJII-Y-1987-METALLIC-SUPERLATTIC-P33
  FULLERTON-EE-1992-J-MAGN-MAGN-MATER-V117-PL301 FULLERTON-EE-1996-PHYS-REV-B-V53-P5112
  GRUNBERG-P-1987-J-APPL-PHYS-V61-P3750 HEINRICH-B-1988-PHYS-REV-B-V38-P2879 INOMATA-K-1995-PHYS-REV-LETT-V74-P1863
  KILPER-R-1995-APPL-SURF-SCI-V91-P93 KLASGES-R-1997-PHYS-REV-B-V56-P801 KOHLHEPP-J-1996-PHYS-REV-B-V55-PR696
  PARKIN-SSP-1990-PHYS-REV-LETT-V64-P2304 SLONCZEWSKI-JC-1991-PHYS-REV-LETT-V67-P3172
  SLONCZEWSKI-JC-1993-J-APPL-PHYS-V73-P5957 TOSCANO-S-1992-J-MAGN-MAGN-MATER-V114-PL6 WANG-RW-1994-PHYS-REV-LETT-V72-P920
  XIAO-MW-1996-PHYS-REV-B-V54-P3322
  
  
   Record 7 of 8. 
  Authors: Heide-C Elliott-RJ Wingreen-NS 
  Title: Spin-Polarized Tunnel Current in Magnetic-Layer Systems and Its Relation to the Interlayer
  Exchange Interaction 
  
  Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 59, Iss 6, pp 4287-4304 Language: English Document type: Article IDS/Book No.: 168NP
  No. Related Records: 20 No. cited references: 56 Addresses: UNIV-OXFORD, DEPT PHYS, 1 KEBLE RD, OXFORD OX1-3NP, ENGLAND
  NEC-RES-INST, PRINCETON, NJ 08540, USA KeyWords Plus: TRANSFER-HAMILTONIAN FORMALISM; NONMAGNETIC METALLIC LAYER;
  FERROMAGNETIC-FILMS; PERPENDICULAR TRANSPORT; LARGE MAGNETORESISTANCE; JUNCTION; OSCILLATIONS; MULTILAYERS; INTERFACE;
  THICKNESS Abstract: The spin-polarized tunnel current and its connection to the interlayer exchange interaction is
  studied in ferromagnet-insulator-ferromagnet thin-film planar junctions out of equilibrium. Building on the
  nonequilibrium Keldysh formalism, it is possible to systematically include a contact interaction between localized spins
  and conduction electrons and extend previous treatments on spin currents and exchange interaction. In particular, a
  Landauer-type formula is derived for the spin current that explains the result found earlier [Schwabe, Wingreen, and
  Elliott, Phys. Rev. B 54, 12 953 (1996)] that the exchange interaction between the ferromagnetic slabs increases in
  proportion to the slab width. Furthermore, switching is shown to occur between parallel and antiparallel coupling of the
  slabs for different applied biases under feasible experimental conditions. [S0163-1829(99)08705-6].  Cited references:
  ARONOV-AG-1976-PISMA-ESKP-TEOR-FIZ-V24-P37 BALTENSPERGER-W-1990-APPL-PHYS-LETT-V57-P2954
  BARNAS-J-1992-J-MAGN-MAGN-MATER-V111-PL215 BARNAS-J-1994-PHYS-REV-B-V49-P2835 BAUER-GEW-1992-PHYS-REV-LETT-V69-P1676
  BLACKMAN-JA-1970-J-PHYS-C-SOLID-STATE-V2-P1670 BLOEMEN-PJH-1994-PHYS-REV-LETT-V72-P764
  BRUNO-P-1991-PHYS-REV-LETT-V67-P1602 BRUNO-P-1993-EUROPHYS-LETT-V23-P615 BRUNO-P-1995-PHYS-REV-B-V52-P411
  CAROLI-C-1971-J-PHYS-C-V4-P2598 CAROLI-C-1971-J-PHYS-C-V4-P916 CAROLI-C-1972-J-PHYS-C-SOLID-STATE-V5-P21
  COMBESCOT-R-1971-J-PHYS-C-SOLID-STATE-V4-P2611 DALBUQUERQUE-J-1994-PHYS-REV-B-V49-P6062
  DATTA-S-1995-CAMBRIDGE-STUDIES-SE-V3 DAUGHTON-JM-1992-THIN-SOLID-FILMS-V216-P162 DAUGHTON-JM-1997-J-APPL-PHYS-V81-P3758
  EDWARDS-DM-1991-J-PHYS-CONDENS-MAT-V3-P4941 EDWARDS-DM-1991-PHYS-REV-LETT-V67-P493
  FEUCHTWANG-TE-1974-PHYS-REV-B-V10-P4121 FEUCHTWANG-TE-1974-PHYS-REV-B-V10-P4135 FEUCHTWANG-TE-1976-PHYS-REV-B-V13-P517
  FULLERTON-EE-1992-J-MAGN-MAGN-MATER-V117-PL301 GALLAGHER-WJ-1997-J-APPL-PHYS-V81-P3741
  GRUNBERG-P-1986-PHYS-REV-LETT-V57-P2442 HEIDE-C-1998-PHYS-REV-B-V57-P1862 JOHNSON-M-1985-PHYS-REV-LETT-V55-P1790
  JOHNSON-M-1987-PHYS-REV-B-V35-P4959 JOHNSON-M-1988-PHYS-REV-B-V37-P5312 JULLIERE-M-1975-PHYS-LETT-A-V54-P225
  KELDYSH-LV-1965-SOV-PHYS-JETP-V20-P1018 LARSEN-U-1981-PHYS-LETT-A-V85-P471 LEVY-PM-1994-SOLID-STATE-PHYSICS-V47
  MAEKAWA-S-1982-IEEE-T-MAGN-V18-P707 MAGNUS-W-1966-FORMULAS-THEOREMS-SP MIYAZAKI-T-1995-J-MAGN-MAGN-MATER-V139-PL231
  MIYAZAKI-T-1997-J-APPL-PHYS-V81-P3753 MOODERA-JS-1996-J-APPL-PHYS-V79-P4724 MUKASA-K-1994-JPN-J-APPL-PHYS-PT-1-V33-P2692
  NOLTING-W-1995-Z-PHYS-B-CON-MAT-V96-P357 NOWAK-J-1992-J-MAGN-MAGN-MATER-V109-P79 PARKIN-SSP-1990-PHYS-REV-LETT-V64-P2301
  SCHWABE-NF-1996-PHYS-REV-B-V54-P2953 SLONCZEWSKI-JC-1989-PHYS-REV-B-V39-P6995 STILES-MD-1993-PHYS-REV-B-V48-P7238
  SUEZAWA-Y-1992-JPN-J-APPL-PHYS-PT-2-V31-P1415 TEDROW-PM-1971-PHYS-REV-LETT-V26-P192 TEDROW-PM-1973-PHYS-REV-B-V7-P318
  TOSCANO-S-1992-J-MAGN-MAGN-MATER-V114-PL6 TSYMBAL-EY-1997-J-PHYS-CONDENS-MAT-V9-PL411 VALET-T-1993-PHYS-REV-B-V48-P7099
  VONSOVSKII-SV-1974-MAGNETISM YAFET-Y-1987-PHYS-REV-B-V36-P3948 ZHANG-S-1997-PHYS-REV-LETT-V79-P3744
  ZILBERMAN-PE-0000-COMMUNICATION
  
   Record 8 of 8. 
  Authors: Endo-Y Kikuchi-N Kitakami-O Shimada-Y Title: Antiferromagnetic Coupling in Co/Ge
  Superlattices Full source: JOURNAL OF PHYSICS-CONDENSED MATTER 1999, Vol 11, Iss 15, pp L133-L137 Language: English
  Document type: Letter IDS/Book No.: 189PL No. Related Records: 13 No. cited references: 16 Addresses: TOHOKU-UNIV, SCI
  MEASUREMENTS RES INST, AOBA KU, 2-1-1 KATAHIRA, SENDAI, MIYAGI 9808577, JAPAN KeyWords Plus: FE/SI SUPERLATTICES;
  MULTILAYERS; MAGNETORESISTANCE; SANDWICHES; DEPENDENCE Abstract: We have investigated interlayer coupling of Co/Ge
  superlattices. The present experiments obviously show that the coupling changes from ferromagnetic (F) to
  antiferromagnetic (AF) and finally to non-coupling (N) with the increase of Ge layer thickness. This coupling behaviour,
  as a function of the spacer thickness, is very similar to that of Fe/Si superlattices, although the coupling strength is
  much smaller than the latter: namely, similar to 0.05 erg cm(-2) for Co/Ge and similar to 1.0 erg cm(-2) for
  Fe/Si. Precise structural characterization indicates that diffused spacers at Co/Ge interfaces are responsible for the
  AF coupling. The same coupling behaviour has also been observed in Co/non-magnetic Co-Ge superlattices, where
  interdiffusion at the interfaces is entirely suppressed. All these results clearly demonstrate that the interlayer
  coupling between neighbouring Co layers is mediated by non-magnetic Co-Ge spacers.  Cited references:
  BRINER-B-1995-PHYS-REV-B-V51-P7303 CHAIKEN-A-1996-PHYS-REV-B-V53-P5518 CULLITY-BD-1956-ELEMENTS-XRAY-DIFFRA-P263
  DEVRIES-JJ-1997-J-MAGN-MAGN-MATER-V165-P435 DEVRIES-JJ-1997-PHYS-REV-LETT-V78-P3023 ENDO-Y-1997-J-MAGN-SOC-JPN-V21-P541
  ENDO-Y-1998-APPL-PHYS-LETT-V72-P495 ENDO-Y-1998-IEEE-T-MAGN-V34-P906 ENDO-Y-1999-IN-PRESS-J-APPL-PHYS
  ENDO-Y-1999-PHYS-REV-B-V59-P4279 FUJII-Y-1987-METALLIC-SUPERLATTIC-P33 FULLERTON-EE-1992-J-MAGN-MAGN-MATER-V117-PL301
  FULLERTON-EE-1996-PHYS-REV-B-V53-P5112 INOMATA-K-1995-PHYS-REV-LETT-V74-P1863 TOSCANO-S-1992-J-MAGN-MAGN-MATER-V114-PL6
  WALSER-P-1998-PHYS-REV-LETT-V80-P2217
  

SCI CDE with Abstracts  (Jan 99 - Jun 99)       (D4.0)

 Record 1 of 8.
Authors: Tong-LN Pan-MH Wu-XS Lu-M Zhai-HR Title:
Transport-Properties of Sputtered FeSi Multilayers 
Full source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 1999, Vol 199, Iss JUN, pp 101-103 Language:
English Document type: Article IDS/Book No.: 204TE No. Related Records: 14 No. cited references: 7 Addresses:
NANJING-UNIV, NATL LAB SOLID STATE MICROSTRUCT, CTR MAT ANAL, CASTM, NANJING 210093, PEOPLES-R-CHINA E-CHINA-UNIV-MET,
PHYS GRP, MAANSHAN 243002, ANHUI, PEOPLES-R-CHINA Author keywords: Multilayers; Exchange Coupling-Interlayer;
Magnetoresistance KeyWords Plus: FE/SI MULTILAYERS; SEMICONDUCTOR Abstract: A relatively large GMR effect associated
with antiferromagnetic (AFM) coupling in sputtered Fe/Si multilayers was observed and the dependence of transport
properties on Si layer and Fe layer thickness and on the number of bilayers at room temperature and 77 K were
studied. Our data suggests that the mechanism of AFM coupling and GMR effect in Fe/Si multilayers is the same as that in
metal/metal systems. (C) 1999 Elsevier Science B.V. All rights reserved.  Cited references:
CHAIKEN-A-1996-PHYS-REV-B-V53-P5518 COWACHE-C-1996-PHYS-REV-B-V53-P5027 DENBROEDER-FJA-1995-PHYS-REV-LETT-V75-P3026
INOMATA-K-1995-PHYS-REV-LETT-V74-P1863 JARRATT-JD-1997-J-APPL-PHYS-V81-P5793 KOHLHEPP-J-1996-J-MAGN-MAGN-MATER-V156-P261
MATTSON-JE-1993-PHYS-REV-LETT-V71-P185

 Record 4 of 8.
Authors: Zuberek-R Fronc-K Szymczak-R Baran-M Mosiniewiczszablewska-E Gnatchenkob-SL Chizhik-AB
Stobiecki-F Szymczak-H Title: Low-Temperature Enhancement of the Magnetic-Anisotropy in Fe Si
Multilayers Full source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 1999, Vol 197, Iss MAY, pp 83-84 Language:
English Document type: Article IDS/Book No.: 195VB No. Related Records: 9 No. cited references: 4 Addresses:
POLISH-ACAD-SCI, INST PHYS, AL LOTNIKOW 32-46, PL-02668 WARSAW, POLAND NATL-ACAD-SCI-UKRAINE, INST LOW TEMP PHYS & ENGN,
UA-310164 KHARKOV, UKRAINE POLISH-ACAD-SCI, INST MOL PHYS, PL-60179 POZNAN, POLAND Author keywords: Magnetic Anisotropy;
Fe Si Multilayers KeyWords Plus: FE/SI Abstract: The FMR and SQUID investigation of the magnetic anisotropy of Fe/Si
multilayers are presented. The multilayers, with various thicknesses of iron and a thick layer of silicon (in order to
eliminate the coupling between Fe layers), have been grown by DC sputtering on single crystal GaAs substrates. Low
temperature enhancement of the easy-plane anisotropy, especially below 50 K, was observed. This anisotropy seems to be
of magnetoelastic origin. The coercivity was shown to decrease with temperature. (C) 1999 Elsevier Science B.V. All
rights reserved.  Cited references: ANKNER-JF-1993-J-APPL-PHYS-V73-P6436 BASZYNSKI-J-1994-PHYS-STATUS-SOLIDI-A-V141-PK23
CHAIKEN-A-1996-PHYS-REV-B-V53-P5518 DEVRIES-JJ-1997-PHYS-REV-LETT-V78-P3023

 Record 5 of 8.
Authors: Chaudhari-SM Suresh-N Phase-DM Gupta-A Dasannacharya-BA Title: Design and Performance of
an Ultrahigh-Vacuum System for Metallic Multilayers Full source: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM
SURFACES AND FILMS 1999, Vol 17, Iss 1, pp 242-248 Language: English Document type: Article IDS/Book No.: 158UU
No. Related Records: 20 No. cited references: 22 Addresses: INTERUNIV-CONSORTIUM-DAE-FACIL, UNIV CAMPUS, INDORE 452001,
MADHYA-PRADESH, INDIA KeyWords Plus: X-RAY MIRRORS; SUPERLATTICES; REFLECTIVITY; ENHANCEMENT; DEPOSITION; LAYERS; FILMS
Abstract: This article describes the design, development, and performance testing of a versatile ultrahigh vacuum (UHV)
electron-beam deposition system for synthesis of thin films and multilayer structures. Initially, basic design norms
required to achieve set objectives are discussed and then a brief description of the system is presented. The fabricated
UHV chamber has a number of vacuum ports to accommodate various features and accessories needed to deposit and
characterize good quality thin films and multilayer structures of different metals. To demonstrate the capabilities of
the system, depositions of thin films and multilayer structures of different materials were carried out. Representative
results of hard x-ray reflectivity measurements corresponding to Ni, Au, and Ag thin films and Nb/Si and Fe/Ni
multilayer structures are given and discussed. Furthermore, the easy adaptability of the system in order to carry out
other investigations related to thin films is also demonstrated by presenting our recent in situ experiments conducted
on aging studies of discontinuous silver films deposited on glass substrates under UHV conditions. (C) 1999 American
Vacuum Society. [S0734-2101(99)01001-5].  Cited references: BAIBICH-MN-1988-PHYS-REV-LETT-V61-P2472
CASANOVE-MJ-1994-MATER-RES-SOC-SYMP-P-V343-P277 CHAIKEN-A-1996-PHYS-REV-B-V53-P5518 CILIA-M-1997-J-APPL-PHYS-V82-P4137
FULLERTON-EE-1993-PHYS-REV-B-V48-P7432 HOLY-V-1994-PHYS-REV-B-V49-P668 HUANG-TC-1992-ADV-XRAY-ANAL-V35-P143
KLOIDT-A-1991-APPL-PHYS-LETT-V58-P2601 LAMELAS-FJ-1991-PHYS-REV-B-V43-P2296 LENGELER-B-1992-ADV-XRAY-ANAL-V35-P127
LOWNDES-DH-1990-PHYS-REV-LETT-V65-P1160 PARKIN-SSP-1991-PHYS-REV-LETT-V66-P2152 PARRATT-LG-1954-PHYS-REV-V95-P359
PATTABI-M-1998-THIN-SOLID-FILMS-V322-P340 SPILLER-E-1985-P-SPIE-V563-P367 SPILLER-E-1990-OPT-ENG-V29-P609
SPILLER-E-1994-SOFT-XRAY-OPTICS STEARNS-DG-1991-J-VAC-SCI-TECHNOL-A-V9-P2662 SUDOH-M-1991-OPT-ENG-V30-P1061
THOMPSON-C-1994-PHYS-REV-B-V49-P4902 TRISCONE-JM-1990-PHYS-REV-LETT-V64-P804 VERES-T-1997-J-APPL-PHYS-V81-P4758

 Record 7 of 8. 
Authors: Fanciulli-M Weyer-G Svane-A Christensen-NE Vonkanel-H Muller-E Onda-N Miglio-L Tavazza-F
Celino-M Title: Microscopic Environment of Fe in Epitaxially Stabilized C-Fesi Full
source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 59, Iss 5, pp 3675-3687 Language: English Document type: Article
IDS/Book No.: 168NN No. Related Records: 20 No. cited references: 57 Addresses: AARHUS-UNIV, INST PHYS & ASTRON, DK-8000
AARHUS, DENMARK ETH-ZURICH, SOLID STATE PHYS LAB, CH-8093 ZURICH, SWITZERLAND UNIV-MILAN, DIPARTIMENTO SCI MAT, I-20126
MILAN, ITALY IST-NAZL-FIS-MAT, I-20126 MILAN, ITALY KeyWords Plus: CONVERSION ELECTRON MOSSBAUER; MOLECULAR-BEAM
EPITAXY; CUBIC IRON SILICIDES; PHASE-TRANSITION; FIELD GRADIENT; ISOMER-SHIFTS; SPECTROSCOPY; BETA-FESI2; FILMS; CSCL
Abstract: Epitaxially stabilized iron monosilicide films having the CsCl structure (c-FeSi) have been investigated by
conversion electron Mossbauer spectroscopy and transmission electron microscopy. The Fe-57 Mossbauer parameters (isomer
shift delta, linewidth Gamma, and quadrupole splitting Delta) are reported and discussed in terms of the local
surrounding of the Fe nucleus. High statistical accuracy and resolution allowed a detailed investigation of the effects
of strain and of the structural phase transformation from the epitaxially stabilized to the bulk stable phase, The phase
transformation was found to proceed in a rather surprising layer by layer mechanism with smooth interfaces between the
epitaxially stabilized, the bulk stable, and a third phase. Results from a molecular-dynamics simulation at constant
pressure and temperature of the structural phase transition are presented and compared with the experimental
findings. The isomer shift and the electric-field gradient at the Fe nucleus in the strained c-FeSi and in the third
phase have been calculated using the ab initio full potential linear muffin-tin orbital method. The Mossbauer parameters
of some relevant point defects in c-FeSi have likewise been calculated within this framework. [S0163-1829(99)01302-8].
Cited references: AFANASEV-AM-1990-HYPERFINE-INTERACT-V61-P325 ANDERSEN-OK-1975-PHYS-REV-B-V12-P3060
ANDERSEN-OK-1985-CANONICAL-DESCRIPTIO-P59 BLAAUW-C-1973-J-PHYS-C-SOLID-STATE-V6-P2371
BRUINSMA-R-1986-J-PHYS-PARIS-V47-P2055 CARLISLE-JA-1996-PHYS-REV-B-V53-P5518 CHAIKEN-A-1996-PHYS-REV-B-V53-P5518
CHEVRIER-J-1992-APPL-SURF-SCI-V56-P438 CHRISTENSEN-NE-1990-PHYS-REV-B-V42-P7148 CHRISTENSEN-NE-1996-ELECT-STRUCTURES-SEM
CHRISTENSEN-NE-1996-PHYS-STATUS-SOLIDI-B-V198-P23 CHRISTIANSEN-J-1976-Z-PHYS-B-CONDENS-MAT-V24-P177
DEGROOTE-S-1993-MATER-RES-SOC-S-P-V220-P133 DEGROOTE-S-1994-MATER-RES-SOC-SYMP-P-V337-P685
DEGROOTE-S-1996-ITAL-PHY-SO-V50-P623 DEKOSTER-J-1995-MATER-RES-SOC-SYMP-P-V382-P253 DELLER-HR-1997-THESIS-ETH-ZURICH
DEVRIES-JJ-1997-PHYS-REV-LETT-V78-P3023 DUFEK-P-1995-PHYS-REV-LETT-V75-P3545
ERIKSSON-O-1989-J-PHYS-CONDENS-MATT-V1-P1589 FANCIULLI-M-0000-UNPUB FANCIULLI-M-1994-PHYS-SCR-V54-P16
FANCIULLI-M-1995-MATER-RES-SOC-S-P-V402-P319 FANCIULLI-M-1995-PHYS-REV-LETT-V75-P1642
FANCIULLI-M-1996-PHYS-REV-B-V54-P5985 FANCIULLI-M-1996-THIN-SOLID-FILMS-V275-P8 FANCIULLI-M-1997-EUROPHYS-LETT-V37-P139
FANCIULLI-M-1997-J-PHYS-CONDENS-MAT-V9-P1619 GOLDANSKII-VI-1968-CHEM-APPL-MOSSBAUER
HELGASON-O-1989-HYPERFINE-INTERACT-V45-P415 JONES-RO-1989-REV-MOD-PHYS-V61-P689 KONDO-S-1995-J-PHYS-CONDENS-MAT-V7-P2123
LANGE-H-1997-PHYS-STATUS-SOLIDI-B-V201-P3 LILJEQUIST-D-1978-NUCL-INSTRUM-METHODS-V155-P529
MADER-KA-1993-PHYS-REV-B-V48-P4364 MASON-TE-1992-PHYS-REV-LETT-V69-P490 METHFESSEL-M-1988-PHYS-REV-B-V38-P1537
METHFESSEL-M-1989-PHYS-REV-B-V40-P2009 MIGLIO-L-1995-APPL-PHYS-LETT-V67-P2293 MIGLIO-L-1997-EUROPHYS-LETT-V37-P415
NISHIYAMA-K-1978-HYPERFINE-INTERACT-V4-P490 ONDA-N-1992-APPL-SURF-SCI-V56-P421 ONDA-N-1993-APPL-SURF-SCI-V73-P124
ONDA-N-1993-MATER-RES-SOC-S-P-V280-P581 PAULING-L-1948-ACTA-CRYSTALLOGR-V1-P212 SKRIVER-HL-1984-LMTO-METHOD
STADELMANN-PA-1987-ULTRAMICROSCOPY-V21-P131 TAVAZZA-F-0000-IN-PRESS-PHYS-REV-B VANDERMERWE-JH-1972-SURF-SCI-V31-P198
VONKANEL-H-1991-APPL-SURF-SCI-V53-P196 VONKANEL-H-1992-PHYS-REV-B-V45-P3807 VONKANEL-H-1994-PHYS-REV-B-V50-P3570
VONKANEL-H-1995-PHYS-REV-LETT-V74-P1163 WATANABE-H-1963-J-PHYS-SOC-JPN-V18-P995 WERTHEIM-GK-1965-PHYS-LETT-V18-P89
WEYER-G-1976-MOSSBAUER-EFFECT-MET-V10-P301 ZUNGER-A-1989-J-CRYST-GROWTH-V98-P1

SCI CDE with Abstracts  (Jan 99 - Jun 99)       (D4.0)

 Record 1 of 7.
  Authors: Tanaka-M 
Title: Ferromagnet Semiconductor Hybrid Structures Grown by Molecular-Beam Epitaxy 
Full source: JOURNAL OF CRYSTAL GROWTH 1999, Vol 202, Iss MAY, pp 660-669 Language: English Document type:
Article IDS/Book No.: 198DB No. Related Records: 20 No. cited references: 31 Addresses: UNIV-TOKYO, DEPT ELECT ENGN,
BUNKYO KU, 7-3-1 HONGO, TOKYO 113, JAPAN PRESTO, JAPAN SCI & TECHNOL CORP, KAWAGUCHI 332, JAPAN Author keywords:
Ferromagnet Semiconductor Hybrid Structures; Mnas; GaAs; Trilayer; (Gamn)as; Magnetic Semiconductor KeyWords Plus: MNAS
THIN-FILMS; DILUTED MAGNETIC SEMICONDUCTORS; GAAS; MAGNETORESISTANCE; SUPERLATTICES; MULTILAYERS; TRILAYERS; SI(001);
(GA Abstract: Recent studies on two types of ferromagnet/semiconductor hybrid structures grown by molecular-beam epitaxy
(MBE) are described: (1) ferromagnet [MnAs]/semiconductor [GaAs] layered heterostructures, and (2) III-V (GaAs)-based
magnetic semiconductor alloy [(GaMn)As] thin films. Their MBE growth, structures, and magnetic properties are
presented. (C) 1999 Elsevier Science B.V. All rights reserved.  Cited references: AKEURA-K-1995-APPL-PHYS-LETT-V67-P3349
AKEURA-K-1996-J-APPL-PHYS-V79-P4957 ANDO-K-1997-AM-PHYS-SOC-1997-MAR ANDO-K-1998-J-APPL-PHYS-V83-P6548
BRINER-B-1994-PHYS-REV-LETT-V73-P340 FOXON-CT-1975-SURF-SCI-V50-P434 HAYASHI-T-1996-41-C-MAGN-MAGN-MAT-N
HAYASHI-T-1996-9-INT-C-MOL-BEAM-EP HAYASHI-T-1997-APPL-PHYS-LETT-V71-P1825 HAYASHI-T-1997-J-APPL-PHYS-V81-P4865
HAYASHI-T-1997-J-CRYST-GROWTH-V175-P1063 INOMATA-K-1995-PHYS-REV-LETT-V74-P1863 MATTSON-JE-1993-PHYS-REV-LETT-V71-P185
OHAGAN-S-1994-J-APPL-PHYS-V75-P7835 OHNO-H-1991-J-APPL-PHYS-V69-P6103 OHNO-H-1996-APPL-PHYS-LETT-V69-P363
OIWA-A-1997-SOLID-STATE-COMMUN-V103-P209 PRINZ-GA-1981-APPL-PHYS-LETT-V39-P397 PRINZ-GA-1990-SCIENCE-V250-P1092
PRINZ-GA-1995-PHYSICS-TODAY SAITO-K-1997-16-EL-MAT-S-MON-JAP-P53 SHEN-A-1997-J-CRYST-GROWTH-V175-P1069
TANAKA-M-1993-13-N-AM-MOL-BEAM-EP TANAKA-M-1993-APPL-PHYS-LETT-V63-P696 TANAKA-M-1994-APPL-PHYS-LETT-V65-P1964
TANAKA-M-1994-J-VAC-SCI-TECHNOL-B-V12-P1091 TANAKA-M-1995-J-CRYST-GROWTH-V150-P1132
VANROY-W-1996-APPL-PHYS-LETT-V69-P711 VANROY-W-1997-J-MAGN-MAGN-MATER-V165-P149 WALDROP-JR-1979-APPL-PHYS-LETT-V34-P630
YU-KM-1992-J-APPL-PHYS-V72-P2850

 Record 3 of 7.
Authors: Tanaka-M Saito-K Goto-M Nishinaga-T Title: Epitaxial-Growth and Properties of
Mnas/GaAs/Mnas Trilayer Heterostructures Full source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 1999, Vol 199, Iss
JUN, pp 719-721 Language: English Document type: Article IDS/Book No.: 204TE No. Related Records: 12 No. cited
references: 10 Addresses: UNIV-TOKYO, DEPT ELECT ENGN, BUNKYO KU, 7-3-1 HONGO, TOKYO 1138656, JAPAN Author keywords:
Trilayer; Magnetic Heterostructures; Molecular-Beam Epitaxy KeyWords Plus: MNAS THIN-FILMS; MOLECULAR-BEAM EPITAXY;
MAGNETIC-PROPERTIES; GAAS; MULTILAYERS; SI(001) Abstract: We have grown MnAs/GaAs/MnAs ferromagnet/semiconductor
trilayer heterostructures on GaAs (1 1 1)B substrates by molecular-beam epitaxy. Cross-sectional transmission electron
microscopy showed that the trilayers are formed as intended with fairly abrupt and smooth interfaces. The epitaxial
orientations of MnAs and GaAs are (0 0 0 1) and (1 1 1), respectively. Double steps were observed in the magnetization
characteristics due to the difference in coercive force between the two MnAs layers. The interlayer coupling was little
when the thickness of the GaAs was 5-10 nm. (C) 1999 Elsevier Science B.V. All rights reserved.  Cited references:
AKEURA-K-1995-APPL-PHYS-LETT-V67-P3349 AKEURA-K-1996-J-APPL-PHYS-V79-P4957 BRINER-B-1994-PHYS-REV-LETT-V73-P340
INOMATA-K-1994-JPN-J-APPL-PHYS-PT-2-V33-P1670 MATTSON-JE-1993-PHYS-REV-LETT-V71-P185
SAITO-K-1997-16-EL-MAT-S-MON-JAP-P53 TANAKA-M-1993-APPL-PHYS-LETT-V63-P696 TANAKA-M-1994-APPL-PHYS-LETT-V65-P1964
TANAKA-M-1994-J-VAC-SCI-TECHNOL-B-V12-P1091 VANROY-W-1996-APPL-PHYS-LETT-V69-P711

 Record 5 of 7.
Authors: Tanaka-M Saito-K Nishinaga-T Title: Epitaxial Mnas/GaAs/Mnas Trilayer Magnetic
Heterostructures Full source: APPLIED PHYSICS LETTERS 1999, Vol 74, Iss 1, pp 64-66 Language: English Document type:
Article IDS/Book No.: 152TA No. Related Records: 12 No. cited references: 12 Addresses: UNIV-TOKYO, DEPT ELECT ENGN,
BUNKYO KU, TOKYO 1138656, JAPAN JAPAN-SCI-&-TECHNOL-CORP, PRESTO, KAWAGUCHI 332, JAPAN KeyWords Plus: MNAS THIN-FILMS;
MOLECULAR-BEAM EPITAXY; GAAS; MULTILAYERS; SI(001) Abstract: We have successfully grown MnAs/GaAs/MnAs
ferromagnet/semiconductor trilayer heterostructures on GaAs(111) B substrates by molecular beam epitaxy. The epitaxial
orientations of MnAs and GaAs are (0001) and (111), respectively, as expected. It was found that epitaxial
monocrystalline GaAs can be grown on the As-rich (3X2)-(0001) MnAs surface. Cross-sectional images by transmission
electron microscopy showed that the trilayers are formed as intended with fairly smooth and atomically abrupt
interfaces. Double-step features were observed in magnetization characteristics due to the difference in coercive force
between the top and bottom MnAs layers. The interlayer coupling was small when the thickness of the GaAs spacer layer
was 5-10 nm. (C) 1999 American Institute of Physics. [S0003-6951(99)02101-4].  Cited references:
AKEURA-K-1995-APPL-PHYS-LETT-V67-P3349 AKEURA-K-1996-J-APPL-PHYS-V79-P4957 BRINER-B-1994-PHYS-REV-LETT-V73-P340
INOMATA-K-1994-JPN-J-APPL-PHYS-PT-2-V33-P1670 MATTSON-JE-1993-PHYS-REV-LETT-V71-P185 PARK-MC-1996-J-APPL-PHYS-V79-P4967
SAITO-K-1997-16-EL-MAT-S-MON-JUL-P53 TANAKA-M-1993-APPL-PHYS-LETT-V63-P696 TANAKA-M-1994-APPL-PHYS-LETT-V65-P1964
TANAKA-M-1994-J-VAC-SCI-TECHNOL-B-V12-P1091 VANROY-W-1996-APPL-PHYS-LETT-V69-P711
VANROY-W-1997-J-MAGN-MAGN-MATER-V165-P149

 Record 7 of 7.
Authors: Matsukura-F Akiba-N Shen-A Ohno-Y Oiwa-A Katsumoto-S Iye-Y Ohno-H Title: Magnetotransport
Properties of All Semiconductor (Ga,Mn)as/(Al,Ga)as/(Ga,Mn)as Tri-Layer Structures Full source: PHYSICA B 1998, Vol 258,
Iss DEC, pp 573-576 Language: English Document type: Article IDS/Book No.: 152KE No. Related Records: 20 No. cited
references: 8 Addresses: TOHOKU-UNIV, ELECT COMMUN RES INST, LAB ELECT INTELLIGENT SYST, AOBA KU, KATAHIRA 2-1-1,
SENDAI, MIYAGI 9808577, JAPAN UNIV-TOKYO, INST SOLID STATE PHYS, TOKYO 1068666, JAPAN Author keywords: (Ga,Mn)as; III-V
Semiconductor; Tri-Layer Structure; Exchange Coupling; RKKY Interaction Abstract: To investigate the magnetic coupling
in all-semiconductor structure, ferromagnet/nonmagnet/ferromagnet tri-layer structures using (Ga,Mn)As as a
ferromagnetic layer and GaAs or (Al,Ga)As as a nonmagnetic layer were prepared and their magnetic and magnetotransport
properties were investigated. The results show that the interaction between the two (Ga,Mn)As layers decreases as the
GaAs thickness increases or Al content of the (Al,Ga)As spacer increases. This shows that the carriers present in the
nonmagnetic layer mediate the magnetic coupling between the two ferromagnetic layers in the present all-semiconductor
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