2000.03.07 PRB

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Biquadratic coupling

Articles citing the articles cited in the original paper

  1. Field:: Cited author/reference
    Statement:: TOSCANO-S-1992-J-MAGN-MAGN-MATER-V114-PL6 SCI CDE with Abstracts (Jan 99 - Dec 99) (D4.1)
    • Record 1 of 15. Title: Magnetic-Properties and Magnetoresistance of Granular Evaporated Fe/Si Films Authors: Ihara-N Narushima-S Kijima-T Abeta-H Saito-T Shinagawa-K Tsushima-T Full source: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 1999, Vol 38, Iss 11, pp 6272-6281
Abstract: Fe (3.4 Angstrom) and Si (6 Angstrom) are evaporated alternately onto silica substrates to realize a granular structure. The substrate temperature T-s during the evaporation is changed from 100 K to 623 K to vary the film structures. The specimens of T-s greater than or equal to room temperature (RT) are superparamagnetic at RT, which suggests a granular structure. Magnetoresistance (MR) at RT is negative (resistivity decreases with increasing magnetic field H) for all specimens. It is thought that the negative MR is attributable to the granular structure. On the other hand, at 77 K a positive MR linear with H (not H-2) up to 50 kOe is observed for all specimens. The linear dependence on H of the positive MR may be due to the nonuniformity in the granular structure. The positive MR itself and the change of the sign of MR from negative to positive with decreasing temperature have not been observed in conventional granular systems such as Co-Ag and Co-Al-O.
  • Record 2 of 15. Title: Amorphous Fe-Si and Fe-Ge Nanostructures Quantitatively Analyzed by X-Ray-Photoelectron Spectroscopy Authors: Schleberger-M Walser-P Hunziker-M Landolt-M Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 60, Iss 20, pp 14360-14365
  • Abstract: The subject of this paper is an x-ray-photoelectron spectroscopy investigation of amorphous Fe-Si and Fe-Ge nanostructures that have attracted interest because of their magnetic coupling properties. To this end we deposit Fe onto clean, amorphous Si and Ge substrates at room temperature and at 40 K, respectively. We take spectra of the Fe3p, Fe2p, and Si2p core Levels to determine possible chemical shifts. The results indicate a charge transfer from the Fe to the Si and Ge atoms at room temperature as well as at 40 K. Additionally, we record wide range spectra of the SiKLL, GeLMM, and the Fe2p peaks as well as spectra of Fe-Si, and Fe-Ge compounds, respectively. Analyzing the inelastic background of the peaks we quantitatively determine the nanostructure of the deposits. We can exclude the formation of sharp interfaces. Instead, we find evidence for the formation of an Fe-Si or Fe-Ge interface compound with a homogeneous composition. For magnetically investigated low-temperature prepared Fe/Si/Fe trilayers we show that the spacer layer is a pure semiconductor with a thickness that is reduced compared to the nominal value. [S0163-1829(99)02443-1].
  • Record 3 of 15. Title: Theory of Interlayer Exchange Interactions in Magnetic Multilayers Authors: Bruno-P Full source: JOURNAL OF PHYSICS-CONDENSED MATTER 1999, Vol 11, Iss 48, pp 9403-9419
  • Abstract: This paper presents a review of the phenomenon of interlayer exchange coupling in magnetic multilayers. The emphasis is put on a pedagogical presentation of the mechanism of the phenomenon, which has been successfully explained in terms of a spin-dependent quantum confinement effect. The theoretical predictions are discussed in connection with corresponding experimental investigations.
  • Record 4 of 15. Title: Interlayer Exchange Coupling, Crystalline and Magnetic-Structure in Fe/CsCl-Fesi Multilayers Grown by Molecular-Beam Epitaxy Authors: Dekoster-J Degroote-S Meersschaut-J Moons-R Vantomme-A Bottyan-L Deak-L Szilagyi-E Nagy-DL Baron-AQR Langouche-G Full source: HYPERFINE INTERACTIONS 1999, Vol 121, Iss 1-4, pp 39-48
  • Abstract: Crystalline and magnetic structure as well as the interlayer exchange coupling in MBE grown Fe/FeSi multilayers are investigated. From conversion electron Mossbauer spectroscopy and ion beam channeling measurements the spacer FeSi material is found to be stabilized in a crystalline metastable metallic FeSi phase with the CsCl structure. Strong non-oscillatory interlayer exchange coupling is identified with magnetometry and synchrotron Mossbauer reflectometry. From the fits of the time spectrum and the resonant theta-2 theta scans a model for the sublayer magnetization of the multilayer is deduced.
  • Record 5 of 15. Title: Magnetic and Electric Properties of Sn-Oxide/M (M=fe, Ni, Co) Multilayers Authors: Matsuyama-K Nishihata-K Komatsu-S Nozaki-Y Full source: IEEE TRANSACTIONS ON MAGNETICS 1999, Vol 35, Iss 5, pp 2901-2903
  • Abstract: Magnetic and electronic properties of novel semiconductive-oxide/ferromagnet multilayers of Sn-oxide and ferromagnetic metals (Fe, Ni, Co), deposited with a multi-target rf magnetron sputtering system, were studied. Among the studied material systems, Co/Sn-oxide sustains well-defined layer structure and ferromagnetic property for the thinnest thickness of 1 nm, A thermionic CPP transport was observed in [Co(2 nm) /Sn-oxide (4 nm)](10), which activation energy was evaluated as 4.4x10(-3) erg from the thermal dependence of conductivity. Negative magnetoresistance was observed in two orthogonal directions of in-plane external fields, which confirms spin dependent transport in Sn-oxide thin film, The measured MR change is 0.6 % (Delta R = 0.8 Omega, R-s=140 Omega) at room temperature.
  • Record 6 of 15. Title: Magnetic and Electric Properties of Mn5Ge3/Ge Nanostructured Films Authors: Miyoshi-T Matsui-T Tsuda-H Mabuchi-H Morii-K Full source: JOURNAL OF APPLIED PHYSICS 1999, Vol 85, Iss 8, pp 5372-5374
  • Abstract: We have investigated the magnetic, electric, and structural properties of Mn5Ge3/Ge nanostructured films produced by solid-state reaction of Mn/Ge multilayered films. The films composed of strongly uniaxially oriented Mn5Ge3 and randomly oriented Ge were successfully produced. The average grain size of Mn5Ge3 considerably changed according to the discharging power (E) of the ion source: 15 nm for E = 25 W and 50 nm for E = 50 W. The temperature dependence of the conductivity for the E = 25 sample showed semiconductor-type behavior over all the temperature region. Whereas the E = 50 sample, the conduction type changed from a metallic type (low temperature) to a semiconductor type (high temperature) with the transition temperature T-TR = 360 K. We also observed the anomalous magnetic behavior of Mn5Ge3. We discuss these behaviors in conjunction with the microstructure of the annealed films. The possibility of the carrier-spin exchange interactions has also been studied. (C) 1999 American Institute of Physics. [S0021-8979(99)22208-6].
  • Record 7 of 15. Title: Interlayer Coupling of Fe/Si/Fe Trilayers with Very Thin Boundary-Layers Authors: Endo-Y Kitakami-O Shimada-Y Full source: JOURNAL OF APPLIED PHYSICS 1999, Vol 85, Iss 8, pp 5741-5743
  • Abstract: The interlayer magnetic coupling of a Fe/Si/Fe trilayer shows an analogous feature to that of Fe/Si superlattices. With an increase in Si layer thickness, it oscillates as ferromagnetic (first F), antiferromagnetic (AF), ferromagnetic (second F), and finally reaches a noncoupling (N) state. We have investigated interlayer coupling of Fe/Si/Fe trilayers inserting very thin (1 or 2 ML thick) boundary layers X (X=Ag, Ge, Fe-Si, Ta, etc.). They are expected to suppress interatomic diffusion between Fe and Si layers. Interlayer coupling of Fe/X/Si/X/Fe with negligible interdiffusion is simply F and changes to N as the Si layer thickness increases. Furthermore, Fe/Fe-Si/Fe trilayers which show coupling of first F, AF but not second F, reproduce second F when a Si layer is inserted in the Fe-Si spacer. These results imply that an amorphous Si spacer mediates ferromagnetic coupling between neighboring Fe layers while the first F and the strong AF coupling usually observed in Fe/Si superlattices are caused by diffused crystalline Fe-Si. (C) 1999 American Institute of Physics. [S0021-8979(99)45508-2].
  • Record 8 of 15. Title: Heat-Induced Effective Exchange Coupling in Magnetic Multilayers with Semiconductors Authors: Walser-P Hunziker-M Landolt-M Full source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 1999, Vol 200, Iss 1-3, pp 95-109
  • Abstract: Two ferromagnetic films separated by an amorphous semiconducting spacer layer are exchange coupled across the spacer. The coupling is reversibly temperature dependent with a positive temperature coefficient making such layered systems a 2-D realization of the concept of heat-induced magnetism. By studying ferromagentic Fe layers separated by amorphous Si, Ge, or ZnSe layers we explore the possibilities to generate such an effective exchange coupling and address the question of the mechanism responsible for it. (C) 1999 Elsevier Science B.V. All rights reserved.
  • Record 9 of 15. Title: Heat-Induced Coupling in Multilayers with Semiconducting Spacers Authors: Walser-P Landolt-M Full source: JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 1999, Vol 199, Iss JUN, pp 412-414
  • Abstract: Two ferromagnetic films separated by an amorphous semiconducting spacer are exchange coupled across the spacer layer. The coupling is reversibly temperature dependent with a positive temperature coefficient. (C) 1999 Elsevier Science B.V. All rights reserved.
  • Record 10 of 15. Title: Heat-Induced Antiferromagnetic Coupling in Multilayers with ZnSe Spacers Authors: Walser-P Hunziker-M Speck-T Landolt-M Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 60, Iss 6, pp 4082-4086
  • Abstract: Two ferromagnetic films separated by an amorphous semiconducting spacer are exchange coupled across the spacer layer. The coupling is reversibly temperature dependent with a positive temperature coefficient. As spacer material we use amorphous ZnSe which is a compound semiconductor and find heat-induced antiferromagnetic coupling in striking similarity to amorphous Si and Ge. In an Fe/alpha-ZnSe/Fe trilayer with spacer thickness between 18 Angstrom and 22 Angstrom the coupling is antiferromagnetic with a positive temperature coefficient. At slightly larger thicknesses between 22 Angstrom and 25 Angstrom we find a reversible transition from ferromagnetic coupling at low temperatures to antiferromagnetic coupling at higher temperatures upon heating. We discuss the reversibly heat-induced effective exchange coupling in terms of localized defect states in the band gap in the vicinity of the Fermi energy. [S0163-1829(99)04230-7].
  • Record 11 of 15. Title: Cohesive, Structural, and Electronic-Properties of Fe-Si Compounds Authors: Moroni-EG Wolf-W Hafner-J Podloucky-R Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 59, Iss 20, pp 12860-12871
  • Abstract: Phase stability, structural, and electronic properties of iron silicides in the Fe3Si, FeSi, and FeSi2 compositions are investigated by first-principle density-functional calculations based on ultrasoft pseudopotentials and all-electron methods. Structural stabilization versus spin-polarization effects are discussed at the Fe3Si composition, while for epsilon-FeSi and beta-FeSi2 we investigate their structural properties and the corresponding semiconducting band properties. All the computed results are analyzed and compared to available experimental data. The stability of the bulk phases, the lattice parameters, the cohesive energies and magnetic properties are found to be in good agreement with experiment when using the generalized gradient approximations for the exchange-correlation functional. Density-functional calculations are unable to account for the small bulk modulus of epsilon-FeSi despite that the computed lattice constant and internal atomic positions coincide with the experimental results. Both full-potential and ultrasoft-pseudopotential methods confirm for beta-FeSi2 the indirect nature of the fundamental gap, which is attributed to a transition between Y to 0.6X Lambda being 30% smaller than the experimental gap. Ultrasoft pseudopotential calculations of Fe-Si magnetic phases and of various nonequilibrium metallic phases at the FeSi and FeSi2 composition are presented. These calculations provide nb initio information concerning the stabilization of metallic pseudomorphic phases via high pressures or epitaxy. [S0163-1829(99)05419-3].
  • Record 12 of 15. Title: Interlayer Exchange Coupling Between 2 Ferromagnets with Finite Thickness Separated by a Nonmetallic Spacer Authors: Wang-JZ Li-BZ Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 59, Iss 9, pp 6383-6389
  • Abstract: Interlayer exchange coupling (IEC) between two ferromagnets (FM's) separated by a nonmetallic spacer is analyzed theoretically within the free-electron approximation. Particular attention is paid to the influence of FM thickness d(FM) On IEC and the variation of Fermi energy with the alignment of two FM's. The results show that (I)d(FM) strongly influence the IEC such that, only when d(FM) is not large, the barrier height and molecular field are both small, the IEC may oscillate with the spacer thickness owing to the quantum-size effect; otherwise, the IEC does not oscillate, but exhibits an exponential behavior in most spacer thickness; (2) as an oscillatory function of d(FM) with multiple periods, the IEC has a negative nonoscillatory term, which will become zero when the molecular field is comparatively small; (3) the Fermi energy has little difference between the parallel and antiparallel alignments of the two FM's, which correlates with the IEC to some extent. Particularly, with the increasing of d(FM) this correlation becomes stronger. [S0163-1829(99)01409-5].
  • Record 13 of 15. Title: Interlayer Coupling in Fe/Fe1-Xsix Superlattices Authors: Endo-Y Kitakami-O Shimada-Y Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 59, Iss 6, pp 4279-4286
  • Abstract: Interlayer coupling has been investigated for a series of Fe/Fe1-xSix (0.4 less than or equal to x less than or equal to 1.0) superlattices. The layer of Fe1-xSix in the lattices is ferromagnetic for x<0.5 and causes ferromagnetic coupling between Fe layers for all spacer thicknesses investigated here. As the Si content increases above x=0.5, the layer becomes nonmagnetic and simultaneously our current in the plane of the sample and current perpendicular to the sample plane measurements suggest that the spacer rapidly changes its conduction property from metallic to highly resistive. Variations of the interlayer magnetic coupling as a function of spacer layer thickness for the spacer compositions above x=0.5 are similar to each other; namely, with an increase of the spacer thickness the interlayer coupling is initially ferromagnetic, then antiferromagnetic, and finally becomes noncoupling. Moreover, the temperature dependence of the bilinear and biquadratic coupling constants, J(1)(T) and J(2)(T) which were obtained by numerical fitting, varies sensitively with x. Assuming that the conduction of the spacers ranges from metallic to insulating as x increases, all these coupling behaviors can be described qualitatively by the quantum interference model formalized by Bruno. Furthermore, we found that the coupling strength is enhanced dramatically with increase of x of Fe1-xSix. [S0163-1829(99)11405-X].
  • Record 14 of 15. Title: Spin-Polarized Tunnel Current in Magnetic-Layer Systems and Its Relation to the Interlayer Exchange Interaction Authors: Heide-C Elliott-RJ Wingreen-NS Full source: PHYSICAL REVIEW B-CONDENSED MATTER 1999, Vol 59, Iss 6, pp 4287-4304
  • Abstract: The spin-polarized tunnel current and its connection to the interlayer exchange interaction is studied in ferromagnet-insulator-ferromagnet thin-film planar junctions out of equilibrium. Building on the nonequilibrium Keldysh formalism, it is possible to systematically include a contact interaction between localized spins and conduction electrons and extend previous treatments on spin currents and exchange interaction. In particular, a Landauer-type formula is derived for the spin current that explains the result found earlier [Schwabe, Wingreen, and Elliott, Phys. Rev. B 54, 12 953 (1996)] that the exchange interaction between the ferromagnetic slabs increases in proportion to the slab width. Furthermore, switching is shown to occur between parallel and antiparallel coupling of the slabs for different applied biases under feasible experimental conditions. [S0163-1829(99)08705-6].
  • Record 15 of 15. Title: Antiferromagnetic Coupling in Co/Ge Superlattices Authors: Endo-Y Kikuchi-N Kitakami-O Shimada-Y Full source: JOURNAL OF PHYSICS-CONDENSED MATTER 1999, Vol 11, Iss 15, pp L133-L137
  • Abstract: We have investigated interlayer coupling of Co/Ge superlattices. The present experiments obviously show that the coupling changes from ferromagnetic (F) to antiferromagnetic (AF) and finally to non-coupling (N) with the increase of Ge layer thickness. This coupling behaviour, as a function of the spacer thickness, is very similar to that of Fe/Si superlattices, although the coupling strength is much smaller than the latter: namely, similar to 0.05 erg cm(-2) for Co/Ge and similar to 1.0 erg cm(-2) for Fe/Si. Precise structural characterization indicates that diffused spacers at Co/Ge interfaces are responsible for the AF coupling. The same coupling behaviour has also been observed in Co/non-magnetic Co-Ge superlattices, where interdiffusion at the interfaces is entirely suppressed. All these results clearly demonstrate that the interlayer coupling between neighbouring Co layers is mediated by non-magnetic Co-Ge spacers. SCI CDE with Abstracts (Jan 99 - Dec 99) (D4.1)
  • Field:: Cited author/reference
    Statement:: CHAIKEN-A-1996-PHYS-REV-B-V53-P5518
  • Field:: Cited author/reference
    Statement:: MATTSON-JE-1993-PHYS-REV-LETT-V71-P185
  • Field:: Cited author/reference
    Statement:: FULLERTON-EE-1996-PHYS-REV-B-V53-P5112
  • Field:: Cited author/reference
    Statement:: SLONCZEWSKI-JC-1995-J-MAGN-MAGN-MATER-V150-P13
  • Field:: Cited author/reference
    Statement:: KOHLHEPP-J-1997-PHYS-REV-B-V55-PR696
    Márton Major