Article Collection: View Collection | Help (Click on the to add an article.)

Show References

[ Previous / Next Abstract | Issue Table of Contents | Bottom of Page ]

Journal of Applied Physics -- April 1, 1992 -- Volume 71, Issue 7, pp. 3283-3293

Interfacial roughness correlation in multilayer films: Influence of total film and individual layer thicknesses

D. E. Savage, N. Schimke, Y.-H. Phang, and M. G. Lagally

Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706

(Received 28 October 1991; accepted 28 December 1991)

A series of W/C multilayer films sputter deposited on Si(100) substrates with total thickness ranging from 400 to 6400 Å and bilayer period from 20 to 160 Å were examined to explore the variation of interfacial roughness and interfacial roughness correlation with film thickness and period. The films were characterized with x-ray diffractometry. Average interfacial roughness is obtained from conventional (,2) scans, while information on roughness correlation is extracted from rocking-curve (transverse-profile) analysis. The magnitude of the roughness is found to depend more on bilayer period than on total film thickness. The observations suggest that interfaces retard the evolution of surface roughness and that thin ``restarting'' layers may be used to control the growth morphology of thin films. Journal of Applied Physics is copyrighted by The American Institute of Physics.

DOI: 10.1063/1.350976
PACS: 68.65.+g, 68.55.Jk, 61.10.Lx        Additional Information

  The American Institute of Physics is a member of CrossRef.

---

Published by the American Institute of Physics Copyright © 2002 American Institute of Physics