FN ISI Export Format
VR 1.0
PT J
AU Vavra, I
   Bydzovsky, J
   Svec, P
   Derer, J
   Kambersky, V
   Frait, Z
   Lopusnik, R
   Sturc, P
   Hilscher, G
TI Low-temperature studies of magnetic Fe/FeSi multilayers
SO PHYSICA B
NR 1
AB Magnetic coupling and magnetoresistance of Fe/FeSi multilayers
   were investigated in the range 4.2-300 K. From M(T, H) data and
   FMR measurements the magnetization arrangement of Fe sublayers
   is discussed. GMR contribution increases with decreasing
   temperature, but its value is very low. (C) 2000 Elsevier
   Science B.V. All rights reserved.
CR FULLERTON EE, 1996, PHYS REV B, V53, P5112
TC 0
BP 1241
EP 1242
PG 2
JI Physica B
PY 2000
PD JUL
VL 284
PN 2
GA 320WD
J9 PHYSICA B
UT ISI:000087423100060
ER

PT J
AU Endo, Y
   Kitakami, O
   Shimada, Y
TI Study of the barrier height in exchange coupled Fe/Fe1-xSix (x
   > 0.70) multilayers
SO JOURNAL OF APPLIED PHYSICS
NR 14
AB Fe/Fe1-xSix multilayers show distinct antiferromagnetic (AF)
   coupling for a wide spacer composition range 0.50 < x less than
   or equal to 1.00. As the Si content x increases, the spacer
   changes from metallic to insulating and the AF coupling
   strength (J) is significantly enhanced from 0.05 to 1.20
   erg/cm(2). We have explained the temperature dependence of the
   coupling constants J(1) and J(2) in terms of the quantum
   interference model by taking an unknown energy difference
   Delta(=U-epsilon(F)) as a fitting parameter, where epsilon(F)
   is the Fermi level of Fe and U is the potential of the Fe1-
   xSix. The aim of the present work is to determine the quantity
   Delta experimentally for the insulating composition range of x
   > 0.70. The quantity Delta was evaluated both from I-V
   characteristics and the temperature dependence of the
   resistivity with the current perpendicular to the sample plane
   using a crossed electrode geometry junction. It is found that
   the barrier height increases from 0.15 to 0.70 eV with
   increasing the Si content x. These values almost agree with the
   parameter Delta deduced from the temperature dependence of J(1)
   and J(2). This agreement supports the validity of our previous
   calculations based on the quantum interference model. (C) 2000
   American Institute of Physics. [S0021-8979(00)88708-3].
CR BRUNO P, 1994, J APPL PHYS, V76, P6972
   CHAIKEN A, 1996, PHYS REV B, V53, P5518
   DEVRIES JJ, 1997, PHYS REV LETT, V78, P3023
   ENDO Y, 1998, APPL PHYS LETT, V72, P495
   ENDO Y, 1999, J APPL PHYS, V85, P5741
   ENDO Y, 1997, J MAGN SOC JPN, V21, P541
   ENDO Y, 1999, PHYS REV B, V59, P4279
   FULLERTON EE, 1992, J MAGN MAGN MATER, V17, PL301
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   GRUNBERG P, 1987, J APPL PHYS, V61, P3750
   INOMATA K, 1995, PHYS REV LETT, V74, P1863
   MESERVEY R, 1982, J APPL PHYS, V53, P1563
   SIMMONS JG, 1963, J APPL PHYS, V34, P1793
   TOSCANO S, 1992, J MAGN MAGN MATER, V114, PL6
TC 0
BP 6836
EP 6838
PG 3
JI J. Appl. Phys.
PY 2000
PD MAY 1
VL 87
IS 9
PN 3
GA 308TK
J9 J APPL PHYS
UT ISI:000086728800308
ER

PT J
AU Strijkers, GJ
   Kohlhepp, JT
   Swagten, HJM
   de Jonge, WJM
TI Biquadratic interlayer exchange coupling in epitaxial Fe/Si/Fe
SO JOURNAL OF APPLIED PHYSICS
NR 13
AB We have studied the biquadratic exchange coupling in
   epitaxially grown Fe/Si/Fe. The temperature and thickness
   dependence of the biquadratic coupling strength were determined
   unambiguously by fitting the easy- and hard-axis magneto-
   optical Kerr effect loops. The origin of the biquadratic
   coupling can be fully understood in terms of Slonczewski's
   loose spins mechanism. (C) 2000 American Institute of Physics.
   [S0021-8979(00)31208-7].
CR BRUNO P, 1995, PHYS REV B, V52, P411
   DEVRIES JJ, 1997, PHYS REV LETT, V78, P3023
   ENDO Y, 1999, PHYS REV B, V59, P4279
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   KOHLHEPP J, 1997, J MAGN MAGN MATER, V165, P431
   KOHLHEPP J, 1996, J MAGN MAGN MATER, V156, P261
   KOHLHEPP J, 1997, PHYS REV B, V55, PR696
   KOHLHEPP JT, 1997, MATER RES SOC SYMP P, V475, P593
   SAITO Y, 1996, JPN J APPL PHYS 2, V35, PL100
   SHI ZP, 1994, EUROPHYS LETT, V26, P473
   SLONCZEWSKI JC, 1993, J APPL PHYS, V73, P5957
   SLONCZEWSKI JC, 1991, PHYS REV LETT, V67, P3172
   STRIJKERS GJ, 1999, PHYS REV B, V60, P9583
TC 0
BP 5452
EP 5454
PG 3
JI J. Appl. Phys.
PY 2000
PD MAY 1
VL 87
IS 9
PN 2
GA 308RT
J9 J APPL PHYS
UT ISI:000086727200252
ER

PT J
AU Chizhik, AB
   Fronc, K
   Gnatchenko, SL
   Merenkov, DN
   Zuberek, R
TI Formation of noncollinear spin configurations during
   magnetization reversal in multilayered Fe/Si films
SO JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
NR 8
AB Magnetization reversal processes in Fe/Si multilayered films
   have been studied by means of the longitudinal magneto-optical
   Kerr effect at room temperature. The multilayers have been
   grown by DC sputtering on the single-crystal GaAs substrate.
   The Kerr effect curves had areas with an invariable or slightly
   varying rotation and had different remanent rotation value in
   the zero magnetic field for different directions of the
   magnetic field in the film plane. The observed features are
   related to the formation of stable and metastable noncollinear
   spin configurations. The experimental results are explained in
   the framework of the theory, which takes into account the
   competition between the bilinear exchange term on the one hand
   and the biquadratic exchange or cubic magnetic anisotropy terms
   on the other hand. (C) 2000 Elsevier Science B.V. All rights
   reserved.
CR FRONC K, IN PRESS
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   GNATCHENKO SL, 1998, J MAGN MAGN MATER, V186, P139
   KOHLHEPP J, 1997, J MAGN MAGN MATER, V165, P431
   KOSTYUCHENKO VV, 1997, J MAGN MAGN MATER, V176, P155
   RUHRIG M, 1991, PHYS STATUS SOLIDI A, V125, P635
   SAITO Y, 1996, JPN J APPL PHYS 2, V35, PL100
   ZUBEREK R, 1995, J MAGN MAGN MATER, V139, P157
TC 0
BP 19
EP 24
PG 6
JI J. Magn. Magn. Mater.
PY 2000
PD APR
VL 213
IS 1-2
GA 305FQ
J9 J MAGN MAGN MATER
UT ISI:000086529100004
ER

PT J
AU Dubowik, J
   Stobiecki, F
   Szymanski, B
   Kudryavtsev, YV
   Grabias, A
   Kopcewicz, M
TI Complex magnetic structure of strongly coupled Fe/Si
   multilayers
SO ACTA PHYSICA POLONICA A
NR 8
AB Fe/Si multilayers with strong bilinear and biquadratic
   couplings were investigated. A complex structure revealed by
   the Mossbauer spectroscopy corresponds to multimode
   ferromagnetic resonance spectra in a non-saturated state.
   Simple dispersion relations for antiferromagnetic coupled
   bilayer structures are shown to be inapplicable to the Fe/Si
   multilayers with a strong biquadratic component to the
   antiferromagnetic bilinear coupling.
CR CHAIKEN A, 1996, PHYS REV B, V53, P5518
   DEVRIES JJ, 1997, PHYS REV LETT, V78, P3032
   FREDRIKZE H, 1997, PHYSICA B, V234, P498
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   INOMATA K, 1996, J MAGN MAGN MATER, V156, P219
   KOHLHEPP J, 1997, J MAGN MAGN MATER, V165, P431
   KOHLHEPP J, 1997, PHYS REV B, V55, PR696
   WIGEN PE, 1994, MAGNETIC MULTILAYERS, P183
TC 0
BP 451
EP 454
PG 4
JI Acta Phys. Pol. A
PY 2000
PD MAR
VL 97
IS 3
GA 299HN
J9 ACTA PHYS POL A
UT ISI:000086193100022
ER

PT J
AU Strijkers, GJ
   Kohlhepp, JT
   Swagten, HJM
   de Jonge, WJM
TI Origin of biquadratic exchange in Fe/Si/Fe
SO PHYSICAL REVIEW LETTERS
NR 21
AB The thickness and temperature dependences of the interlayer
   exchange coupling in well-defined molecular beam epitaxy-grown
   Fe/Si/Fe sandwich structures have been studied. The biquadratic
   coupling shows a strong temperature dependence in contrast to
   the bilinear coupling. Both depend exponentially on thickness.
   These observations can be well understood in the framework of
   Slonczewski's loose spins model [J. Appl. Phys. 73, 5957
   (1993)]. No bilinear contribution of the loose spins to the
   coupling was observed.
CR ANDERSON GW, 1996, J APPL PHYS, V79, P5641
   BRUNO P, 1995, PHYS REV B, V52, P411
   DEMOKRITOV S, 1994, PHYS REV B, V49, P720
   DEVRIES JJ, 1997, PHYS REV LETT, V78, P3023
   ENDO Y, 1999, PHYS REV B, V59, P4279
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   FUSS A, 1992, PHYS SCRIPTA, VT45, P95
   GUTIERREZ CJ, 1992, J MAGN MAGN MATER, V116, PL305
   KOHLHEPP J, 1997, J MAGN MAGN MATER, V165, P431
   KOHLHEPP J, 1996, J MAGN MAGN MATER, V156, P261
   KOHLHEPP J, 1997, PHYS REV B, V55, PR696
   MA P, 1997, PHYS REV B, V56, P9881
   SAITO Y, 1996, JPN J APPL PHYS 2, V35, PL100
   SCHAFER M, 1995, J APPL PHYS, V77, P6432
   SHI ZP, 1994, EUROPHYS LETT, V26, P473
   SHI ZP, UNPUB
   SLONCZEWSKI JC, 1993, J APPL PHYS, V73, P5957
   SLONCZEWSKI JC, 1995, J MAGN MAGN MATER, V150, P13
   SLONCZEWSKI JC, 1991, PHYS REV LETT, V67, P3172
   STRIJKERS GJ, 1999, PHYS REV B, V60, P9583
   VANDERHEIJDEN PAA, 1999, PHYS REV LETT, V82, P1050
TC 0
BP 1812
EP 1815
PG 4
JI Phys. Rev. Lett.
PY 2000
PD FEB 21
VL 84
IS 8
GA 285HK
J9 PHYS REV LETT
UT ISI:000085383500044
ER

PT J
AU Carlisle, JA
   Blankenship, SR
   Smith, RN
   Chaiken, A
   Michel, RP
   van Buuren, T
   Terminello, LJ
   Jia, JJ
   Callcott, TA
   Ederer, DL
TI Electronic structure and crystalline coherence in Fe/Si
   multilayers
SO JOURNAL OF CLUSTER SCIENCE
NR 17
AB Soft x-ray fluorescence spectroscopy has been used to examine
   the electronic structure of deeply buried silicide thin films
   that arise in Fe/Si multilayers. These systems exhibit
   antiferromagnetic (AF) coupling of the Fe layers, despite their
   lack of a noble metal spacer layer found in most GMR materials.
   Also, the degree of coupling is very dependent on preparation
   conditions, especially spacer layer thickness and growth
   temperature. The valence band spectra are quite different for
   films with different spacerlayer thickness yet are very similar
   for films grown at different growth temperatures. The latter
   result is surprising since AF coupling is strongly dependent on
   growth temperature. Combining near-edge x-ray absorption with
   the fluorescence data demonstrates that the local bonding
   structure in the silicide spacer layer in epitaxial films which
   exhibit AF coupling are metallic. These results indicate the
   equal roles of crystalline coherence and electronic structure
   in determining the magnetic properties of these systems.
CR CARLISLE JA, 1995, APPL PHYS LETT, V67, P34
   CARLISLE JA, 1996, PHYS REV B, V53, PR8824
   CHAIKEN A, 1996, J APPL PHYS, V79, P4772
   CHAIKEN A, 1996, PHYS REV B, V53, P5518
   FULLERTON EE, 1993, J APPL PHYS, V73, P6335
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   HATHAWAY KB, 1994, ULTRATHIN MAGNETIC S
   JIA JJ, 1992, PHYS REV B, V46, P9446
   JIA JJ, 1995, REV SCI INSTRUM, V66, P1394
   MATTSON JE, 1993, PHYS REV LETT, V71, P185
   NILSSON PO, 1995, PHYS REV B, V52, PR8643
   NORDGREN EJ, 1997, J PHYS IV, V7, P9
   PERERA RCC, 1989, J APPL PHYS, V66, P3676
   RUBENSSON JE, 1990, PHYS REV LETT, V64, P1047
   STOHR J, 1992, NEXAFS SPECTROSCOPY
   VONKANEL H, 1992, PHYS REV B, V45, P13807
TC 0
BP 591
EP 599
PG 9
JI J. Clust. Sci.
PY 1999
PD DEC
VL 10
IS 4
GA 256AE
J9 J CLUST SCI
UT ISI:000083701700011
ER

PT J
AU Walser, P
   Hunziker, M
   Landolt, M
TI Heat-induced effective exchange coupling in magnetic
   multilayers with semiconductors
SO JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
NR 35
AB Two ferromagnetic films separated by an amorphous
   semiconducting spacer layer are exchange coupled across the
   spacer. The coupling is reversibly temperature dependent with a
   positive temperature coefficient making such layered systems a
   2-D realization of the concept of heat-induced magnetism. By
   studying ferromagentic Fe layers separated by amorphous Si, Ge,
   or ZnSe layers we explore the possibilities to generate such an
   effective exchange coupling and address the question of the
   mechanism responsible for it. (C) 1999 Elsevier Science B.V.
   All rights reserved.
CR 1991, LANDOLTBERNSTEIN SER, V3
   ALBERS A, 1994, PHYSICA B, V194, P1091
   BERNASCONI J, 1969, PHYS KONDENS MATER, V10, P224
   BRINER B, 1994, PHYS REV LETT, V73, P340
   BRINER B, 1994, THESIS ETH ZURICH
   BURGLER DE, 1998, PHYS REV LETT, V80, P4983
   BUSCH G, 1967, HELV PHYS ACTA, V40, P812
   CHAIKEN A, 1996, PHYS REV B, V53, P5518
   DEMOKRITOV S, 1994, PHYS REV B, V49, P720
   DENBROEDER FJA, 1995, PHYS REV LETT, V75, P3026
   DEVRIES JJ, 1997, PHYS REV LETT, V78, P3023
   EDWARDS DM, 1991, J PHYS-CONDENS MAT, V3, P4941
   FULLERTON EE, 1992, J MAGN MAGN MATER, V17, PL301
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   GOLDFINGER P, 1963, T FARADAY SOC, V59, P2851
   INOMATA K, 1995, PHYS REV LETT, V74, P1863
   KOHLHEPP J, 1996, J MAGN MAGN MATER, V156, P261
   LANDOLT M, 1986, APPL PHYS A-MATER, V41, P83
   LIN PK, 1977, CAN J PHYS, V55, P1641
   MAGNIN P, 1978, J APPL PHYS, V49, P1709
   MAGNIN P, 1978, J PHYS F MET PHYS, V8, P2085
   MOTT NF, 1987, CONDUCTION NONCRYSTA
   MOTT NF, 1979, ELECT PROCESSES NONC
   NEEL L, 1962, CR HEBD ACAD SCI, V255, P1676
   OHKAWA K, 1995, PHYS STATUS SOLIDI B, V187, P291
   PRINZ GA, 1994, ULTRATHIN MAGNETIC S
   SCHLEBERGER M, UNPUB
   SCHOLL A, 1998, THESIS U KOLN
   SIEGBHAN K, 1958, P REH C NUCL STRUCT, P1957
   SIEGMANN HC, 1992, J PHYS-CONDENS MAT, V4, P8395
   TOSCANO S, 1992, J MAGN MAGN MATER, V114, PL6
   TOSCANO S, 1992, THESIS ETH ZURICH
   TOUGAARD S, 1990, J ELECTRON SPECTROSC, V52, P243
   WALSER P, 1999, IN PRESS PHYS REV B, V60
   WALSER P, 1998, PHYS REV LETT, V80, P2217
TC 0
BP 95
EP 109
PG 15
JI J. Magn. Magn. Mater.
PY 1999
PD OCT
VL 200
IS 1-3
GA 241DP
J9 J MAGN MAGN MATER
UT ISI:000082867700008
ER

PT J
AU Walser, P
   Hunziker, M
   Speck, T
   Landolt, M
TI Heat-induced antiferromagnetic coupling in multilayers with
   ZnSe spacers
SO PHYSICAL REVIEW B
NR 22
AB Two ferromagnetic films separated by an amorphous
   semiconducting spacer are exchange coupled across the spacer
   layer. The coupling is reversibly temperature dependent with a
   positive temperature coefficient. As spacer material we use
   amorphous ZnSe which is a compound semiconductor and find heat-
   induced antiferromagnetic coupling in striking similarity to
   amorphous Si and Ge. In an Fe/alpha-ZnSe/Fe trilayer with
   spacer thickness between 18 Angstrom and 22 Angstrom the
   coupling is antiferromagnetic with a positive temperature
   coefficient. At slightly larger thicknesses between 22 Angstrom
   and 25 Angstrom we find a reversible transition from
   ferromagnetic coupling at low temperatures to antiferromagnetic
   coupling at higher temperatures upon heating. We discuss the
   reversibly heat-induced effective exchange coupling in terms of
   localized defect states in the band gap in the vicinity of the
   Fermi energy. [S0163-1829(99)04230-7].
CR BRINER B, 1993, PHYS REV LETT, V73, P340
   BRINER B, 1994, THESIS ETZ ZURICH
   CHAIKEN A, 1996, PHYS REV B, V53, P5518
   DENBROEDER FJA, 1995, PHYS REV LETT, V75, P3026
   DEVRIES JJ, 1997, J MAGN MAGN MATER, V165, P435
   DEVRIES JJ, 1997, PHYS REV LETT, V78, P3023
   FULLERTON EE, 1992, J MAGN MAGN MATER, V117, PL301
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   GOLDFINGER P, 1963, T FARADAY SOC, V59, P2851
   GRUNBERG P, 1986, PHYS REV LETT, V57, P2442
   INOMATA K, 1995, PHYS REV LETT, V74, P1863
   KOHLHEPP J, 1996, J MAGN MAGN MATER, V156, P261
   LANDOLT M, 1986, APPL PHYS A-MATER, V41, P83
   LIM PK, 1977, CAN J PHYS, V55, P1641
   MOTT NF, 1987, CONDUCTION NONCRYSTA
   OHKAWA K, 1995, PHYS STATUS SOLIDI B, V187, P291
   PARKIN SSP, 1990, PHYS REV LETT, V64, P2304
   PRINZ GA, 1994, ULTRATHIN MAGNETIC S
   SCHOLL A, 1998, THESIS U KOLN
   SIEGMANN HC, 1992, J PHYS-CONDENS MAT, V4, P8395
   TOSCANO S, 1992, J MAGN MAGN MATER, V114, PL6
   WALSER P, 1998, PHYS REV LETT, V80, P2217
TC 1
BP 4082
EP 4086
PG 5
JI Phys. Rev. B
PY 1999
PD AUG 1
VL 60
IS 6
GA 226AA
J9 PHYS REV B
UT ISI:000081997100053
ER

PT J
AU Walser, P
   Landolt, M
TI Heat-induced coupling in multilayers with semiconducting
   spacers
SO JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
NR 11
AB Two ferromagnetic films separated by an amorphous
   semiconducting spacer are exchange coupled across the spacer
   layer. The coupling is reversibly temperature dependent with a
   positive temperature coefficient. (C) 1999 Elsevier Science
   B.V. All rights reserved.
CR BRINER B, 1994, PHYS REV LETT, V73, P340
   CHAIKEN A, 1996, PHYS REV B, V53, P5518
   DENBROEDER FJA, 1995, PHYS REV LETT, V75, P3026
   DEVRIES JJ, 1997, PHYS REV LETT, V78, P3023
   FULLERTON EE, 1992, J MAGN MAGN MATER, V117, PL301
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   INOMATA K, 1995, PHYS REV LETT, V74, P1983
   KOHLHEPP J, 1996, J MAGN MAGN MATER, V156, P261
   SIEGMANN HC, 1992, J PHYS-CONDENS MAT, V4, P8395
   TOSCANO S, 1992, J MAGN MAGN MATER, V114, PL6
   WALSER P, 1998, PHYS REV LETT, V80, P2217
TC 0
BP 412
EP 414
PG 3
JI J. Magn. Magn. Mater.
PY 1999
PD JUN
VL 199
GA 204TE
J9 J MAGN MAGN MATER
UT ISI:000080779600130
ER

PT J
AU Endo, Y
   Kitakami, O
   Shimada, Y
TI Interlayer coupling of Fe/Si/Fe trilayers with very thin
   boundary layers
SO JOURNAL OF APPLIED PHYSICS
NR 12
AB The interlayer magnetic coupling of a Fe/Si/Fe trilayer shows
   an analogous feature to that of Fe/Si superlattices. With an
   increase in Si layer thickness, it oscillates as ferromagnetic
   (first F), antiferromagnetic (AF), ferromagnetic (second F),
   and finally reaches a noncoupling (N) state. We have
   investigated interlayer coupling of Fe/Si/Fe trilayers
   inserting very thin (1 or 2 ML thick) boundary layers X (X=Ag,
   Ge, Fe-Si, Ta, etc.). They are expected to suppress interatomic
   diffusion between Fe and Si layers. Interlayer coupling of
   Fe/X/Si/X/Fe with negligible interdiffusion is simply F and
   changes to N as the Si layer thickness increases. Furthermore,
   Fe/Fe-Si/Fe trilayers which show coupling of first F, AF but
   not second F, reproduce second F when a Si layer is inserted in
   the Fe-Si spacer. These results imply that an amorphous Si
   spacer mediates ferromagnetic coupling between neighboring Fe
   layers while the first F and the strong AF coupling usually
   observed in Fe/Si superlattices are caused by diffused
   crystalline Fe-Si. (C) 1999 American Institute of Physics.
   [S0021-8979(99)45508-2].
CR CHAIKEN A, 1996, PHYS REV B, V53, P5518
   DEVRIES JJ, 1997, PHYS REV LETT, V78, P3023
   ENDO Y, 1998, APPL PHYS LETT, V72, P495
   ENDO Y, 1998, IEEE T MAGN, V34, P906
   ENDO Y, 1997, J MAGN SOC JPN, V21, P541
   ENDO Y, 1999, PHYS REV B, V59, P4279
   ENDO Y, UNPUB
   FULLERTON EE, 1992, J MAGN MAGN MATER, V117, PL301
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   INOMATA K, 1995, PHYS REV LETT, V74, P1863
   NEEL L, 1962, CR HEBD ACAD SCI, V255, P1545
   TOSCANO IS, 1992, J MAGN MAGN MATER, V114, PL6
TC 1
BP 5741
EP 5743
PG 3
JI J. Appl. Phys.
PY 1999
PD APR 15
VL 85
IS 8
PN 2B
GA 188NF
J9 J APPL PHYS
UT ISI:000079853500152
ER

PT J
AU Endo, Y
   Kikuchi, N
   Kitakami, O
   Shimada, Y
TI Antiferromagnetic coupling in Co/Ge superlattices
SO JOURNAL OF PHYSICS-CONDENSED MATTER
NR 16
AB We have investigated interlayer coupling of Co/Ge
   superlattices. The present experiments obviously show that the
   coupling changes from ferromagnetic (F) to antiferromagnetic
   (AF) and finally to non-coupling (N) with the increase of Ge
   layer thickness. This coupling behaviour, as a function of the
   spacer thickness, is very similar to that of Fe/Si
   superlattices, although the coupling strength is much smaller
   than the latter: namely, similar to 0.05 erg cm(-2) for Co/Ge
   and similar to 1.0 erg cm(-2) for Fe/Si. Precise structural
   characterization indicates that diffused spacers at Co/Ge
   interfaces are responsible for the AF coupling. The same
   coupling behaviour has also been observed in Co/non-magnetic
   Co-Ge superlattices, where interdiffusion at the interfaces is
   entirely suppressed. All these results clearly demonstrate that
   the interlayer coupling between neighbouring Co layers is
   mediated by non-magnetic Co-Ge spacers.
CR BRINER B, 1995, PHYS REV B, V51, P7303
   CHAIKEN A, 1996, PHYS REV B, V53, P5518
   CULLITY BD, 1956, ELEMENTS XRAY DIFFRA, P263
   DEVRIES JJ, 1997, J MAGN MAGN MATER, V165, P435
   DEVRIES JJ, 1997, PHYS REV LETT, V78, P3023
   ENDO Y, 1998, APPL PHYS LETT, V72, P495
   ENDO Y, 1998, IEEE T MAGN, V34, P906
   ENDO Y, 1999, IN PRESS J APPL PHYS
   ENDO Y, 1997, J MAGN SOC JPN, V21, P541
   ENDO Y, 1999, PHYS REV B, V59, P4279
   FUJII Y, 1987, METALLIC SUPERLATTIC, P33
   FULLERTON EE, 1992, J MAGN MAGN MATER, V117, PL301
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   INOMATA K, 1995, PHYS REV LETT, V74, P1863
   TOSCANO S, 1992, J MAGN MAGN MATER, V114, PL6
   WALSER P, 1998, PHYS REV LETT, V80, P2217
TC 0
BP L133
EP L137
PG 5
JI J. Phys.-Condes. Matter
PY 1999
PD APR 19
VL 11
IS 15
GA 189PL
J9 J PHYS-CONDENS MATTER
UT ISI:000079913700001
ER

PT J
AU Endo, Y
   Kitakami, O
   Shimada, Y
TI Interlayer coupling in Fe/Fe1-xSix superlattices
SO PHYSICAL REVIEW B-CONDENSED MATTER
NR 28
AB Interlayer coupling has been investigated for a series of
   Fe/Fe1-xSix (0.4 less than or equal to x less than or equal to
   1.0) superlattices. The layer of Fe1-xSix in the lattices is
   ferromagnetic for x<0.5 and causes ferromagnetic coupling
   between Fe layers for all spacer thicknesses investigated here.
   As the Si content increases above x=0.5, the layer becomes
   nonmagnetic and simultaneously our current in the plane of the
   sample and current perpendicular to the sample plane
   measurements suggest that the spacer rapidly changes its
   conduction property from metallic to highly resistive.
   Variations of the interlayer magnetic coupling as a function of
   spacer layer thickness for the spacer compositions above x=0.5
   are similar to each other; namely, with an increase of the
   spacer thickness the interlayer coupling is initially
   ferromagnetic, then antiferromagnetic, and finally becomes
   noncoupling. Moreover, the temperature dependence of the
   bilinear and biquadratic coupling constants, J(1)(T) and
   J(2)(T) which were obtained by numerical fitting, varies
   sensitively with x. Assuming that the conduction of the spacers
   ranges from metallic to insulating as x increases, all these
   coupling behaviors can be described qualitatively by the
   quantum interference model formalized by Bruno. Furthermore, we
   found that the coupling strength is enhanced dramatically with
   increase of x of Fe1-xSix. [S0163-1829(99)11405-X].
CR BARTHELEMY A, 1990, J APPL PHYS, V67, P5908
   BRINER B, 1993, PHYS REV LETT, V73, P340
   BRUNO P, 1994, J APPL PHYS, V76, P6972
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   ENDO Y, UNPUB
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   HEINRICH B, 1988, PHYS REV B, V38, P12879
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   TOSCANO S, 1992, J MAGN MAGN MATER, V114, PL6
   WANG RW, 1994, PHYS REV LETT, V72, P920
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TC 7
BP 4279
EP 4286
PG 8
JI Phys. Rev. B-Condens Matter
PY 1999
PD FEB 1
VL 59
IS 6
GA 168NP
J9 PHYS REV B-CONDENSED MATTER
UT ISI:000078699400048
ER

PT J
AU Tong, LN
   Pan, MH
   Wu, J
   Wu, XS
   Du, J
   Lu, M
   Feng, D
   Zhai, HR
   Xia, H
TI Magnetic and transport properties of sputtered Fe/Si
   multilayers
SO EUROPEAN PHYSICAL JOURNAL B
NR 26
AB The structural, magnetic and transport properties of sputtered
   Fe/Si multilayers were studied. The analyses of the data of the
   X-ray diffraction, resistance and magnetic measurements show
   that heavy atomic interdiffusion between Fe and Si occurs,
   resulting in multilayers of different complicated structures
   according to different sublayer thicknesses. The nominal Fe
   layers in the multilayers generally consist of Fe layers doped
   with Si; ferromagnetic Fe-Si silicide layers and nonmagnetic
   Fe-Si silicide interface layers, while the nominal Si spacers
   turn out to be Fe-Si compound layers with additional amorphous
   Si sublayers only under the condition either t(Si) greater than
   or equal to 3 nm for the series [Fe(3 nm)/Si(t(Si))](30) or
   t(Fe) < 2 nm for the series [Fe(t(Fe))/Si(1.9 nm)](30)
   multilayers. A strong antiferromagnetic (AFM) coupling and
   negative magnetoresistance (MR) effect, about 1%, were observed
   only in multilayers with iron silicide spacers and disappeared
   when alpha-Si layers appear in the spacers. The dependences of
   MR on t(Si) and on bilayer numbers N resemble the dependence of
   AFM coupling. The increase of MR ratio with increasing N is
   mainly attributed to the improvement of AFM coupling for
   multilayers with N. The t(Fe) dependence of MR ratio is similar
   to that in metal/metal system with predominant bulk spin
   dependent scattering and is fitted by a phenomenological
   formula for GMR. At 77 K both the MR effect and saturation
   field H-s increase. All these facts suggest that the mechanisms
   of the AFM coupling and MR effect in sputtered Fe/Si
   multilayers are similar to those in metal/metal system.
CR BAIBICH MN, 1988, PHYS REV LETT, V61, P2472
   BRINER B, 1994, PHYS REV LETT, V73, P340
   CARLISLE JA, 1996, PHYS REV B, V53, PR8824
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   CHILDRESS JR, 1992, PHYS REV B, V45, P2855
   CHOPRA KL, 1969, THIN FILM PHENOMENA, P345
   CLLITY DB, 1978, ELEMENTS XRAY DIFFRA
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   FULLERTON EE, 1996, PHYS REV B, V53, P5112
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   JARRATT JD, 1997, J APPL PHYS, V81, P5793
   KLASGES R, 1997, PHYS REV B, V56, P10801
   KOHLHEPP J, 1997, J MAGN MAGN MATER, V165, P431
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TC 0
BP 61
EP 66
PG 6
JI Eur. Phys. J. B
PY 1998
PD SEP
VL 5
IS 1
GA 131HP
J9 EUR PHYS J B
UT ISI:000076570400009
ER

PT J
AU Endo, Y
   Kitakami, O
   Shimada, Y
TI Temperature dependence of interlayer coupling in Fe/Si
   superlattices
SO IEEE TRANSACTIONS ON MAGNETICS
NR 12
AB We have explored the temperature dependence of the interlayer
   coupling in Fe/Fe1-xSix superlattices (0.5 less than or equal
   to x less than or equal to 1). It is found that the Si content
   of the Fe1-xSix, spacer greatly affects the temperature
   dependence of the bilinear and biquadratic coupling constants.
   Neither the "thickness fluctuation" model nor the "loose" spin
   model proposed by Slonczewski give satisfactory explanations to
   the temperature-dependent interlayer coupling. Instead, the
   present experimental results for all spacer compositions can be
   reproduced very well by the quantum interference model. We
   discuss the experimental results based on the above interlayer
   coupling models.
CR BRUNO P, 1994, J APPL PHYS, V76, P6972
   CHAIKEN A, 1996, PHYS REV B, V53, P5518
   ENDO Y, 1997, J MAGN SOC JPN, V21, P541
   ENDO Y, UNPUB
   FULLERTON EE, 1992, J MAGN MAGN MATER, V117, PL301
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   INOMATA K, 1994, JPN J APPL PHYS 2, V33, PL1670
   KOHLHEPP J, 1997, J MAGN MAGN MATER, V165, P431
   SLONCZEWSKI JC, 1993, J APPL PHYS, V73, P5957
   SLONCZEWSKI JC, 1991, PHYS REV LETT, V67, P3172
   TOSCANO S, 1992, J MAGN MAGN MATER, V114, PL6
   XIAO MW, 1996, PHYS REV B, V54, P3322
TC 4
BP 906
EP 908
PG 3
JI IEEE Trans. Magn.
PY 1998
PD JUL
VL 34
IS 4
PN 1
GA 101CP
J9 IEEE TRANS MAGN
UT ISI:000074852300028
ER

PT J
AU Moons, R
   Degroote, S
   Dekoster, J
   Vantomme, A
   Langouche, G
TI Structural characterization of metastable FeSi films and of
   Fe/FeSi multilayers
SO NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-
   BEAM INTERACTIONS WITH MATERIALS AND ATOMS
NR 12
AB The structural properties of molecular beam epitaxy (MBE)-grown
   metastable CsCl-type FeSi (i.e. an iron silicide with the CsCl
   lattice structure) on Si (1 1 1) and of Fe/FeSi multilayers
   grown with MBE on MgO (0 0 1) are reported. Rutherford
   backscattering and channeling spectrometry (RBS-C) combined
   with X-ray diffraction are used to determine the structure,
   epitaxy and crystalline quality of the layers. Single
   metastable CsCl-FeSi layers could be stabilized epitaxially up
   to a thickness of 62 nm and are found to be twinned with
   respect to the Si (1 1 1) substrate, Moreover, an extensive
   study on antiferromagnetically (AF) coupled (Fe/FeSi)(15)/MgO
   multilayers indicates that the Fe layers are slightly
   expansively strained while the FeSi spacers are fully relaxed.
   Further, we could grove that the FeSi spacers in the
   multilayers have a cubic CsCl lattice structure with a lattice
   parameter of 0.28 nm. (C) 1998 Elsevier Science B.V.
CR APPLETON BR, 1977, ION BEAM HDB MAT ANA
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TC 0
BP 268
EP 272
PG 5
JI Nucl. Instrum. Methods Phys. Res. Sect. B-Beam Interact. Mater.
   Atoms
PY 1998
PD MAR
VL 138
GA ZW154
J9 NUCL INSTRUM METH PHYS RES B
UT ISI:000074380400046
ER

PT J
AU Demokritov, SO
TI Biquadratic interlayer coupling in layered magnetic systems
SO JOURNAL OF PHYSICS D-APPLIED PHYSICS
NR 75
AB An unusual interlayer coupling, recently discovered in layered
   magnetic systems, is analysed from the experimental and
   theoretical points of view. This coupling favours the 90
   degrees orientation of the magnetization of the adjacent
   magnetic films. It can be phenomenologically described by a
   term in the energy expression, which is biquadratic with
   respect to the magnetizations of the two films. The main
   experimental findings, as well as the theoretical models,
   explaining the phenomenon are discussed.
CR AZEVEDO A, 1996, PHYS REV LETT, V76, P4837
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   FUCHS P, 1997, PHYS REV B, V55, P12546
   FUJIWARA H, 1995, IEEE T MAGN, V31, P4112
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   FUSS A, 1992, J MAGN MAGN MATER, V103, PL221
   GRIMSDITCH M, 1996, PHYS REV B, V54, P3385
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TC 8
BP 925
EP 941
PG 17
JI J. Phys. D-Appl. Phys.
PY 1998
PD APR 21
VL 31
IS 8
GA ZM480
J9 J PHYS-D-APPL PHYS
UT ISI:000073544400003
ER

PT J
AU Saito, Y
   Inomata, K
TI Biquadratic coupling contributions to the magnetoresistive
   curves in Fe/FeSi/Fe sandwiches with semiconductor like FeSi
   and metallic bcc FeSi spacers
SO JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
NR 17
AB Magnetoresistance was investigated in Fe/FeSi/Fe sandwiches
   with metallic bcc-and semiconductor like FeSi spacers prepared
   by an ultrahigh-vacuum magnetron sputtering system, enhanced
   with inductively coupled RF plasma. In the easy axis direction,
   MR curves at 298 K have a dip around the zero magnetic field
   for both Fe/FeSi/Fe sandwiches with semiconductor like FeSi and
   hcc metallic FeSi spacers. On the other hand, MR curves at 10 K
   exhibit a dip and no anomaly around the zero magnetic field for
   the Fe/bcc metallic FeSi/Fe and Fe/semiconductor like FeSi/Fe
   sandwiches, respectively. when the contribution of biquadratic
   coupling to interlayer exchange coupling is considered, these
   MR behaviors are well explained. These results support the
   interlayer exchange coupling model attributed to the
   biquadratic exchange coupling which outweighs the colinear term
   at a low temperature in Fe/FeSi multilayers.
CR BRUNO P, 1994, PHYS REV B, V49, P13231
   CHAIKEN A, 1996, PHYS REV B, V53, P5518
   DEMELO CARS, 1995, PHYS REV B, V51, P8922
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   FULLERTON EE, 1996, PHYS REV B, V53, P5112
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TC 1
BP 1138
EP 1141
PG 4
JI J. Phys. Soc. Jpn.
PY 1998
PD APR
VL 67
IS 4
GA ZK389
J9 J PHYS SOC JPN
UT ISI:000073315800019
ER

PT J
AU Walser, P
   Schleberger, M
   Fuchs, P
   Landolt, M
TI Heat induced antiferromagnetic coupling in multilayers with Ge
   spacers
SO PHYSICAL REVIEW LETTERS
NR 16
AB We report on heat induced antiferromagnetic exchange coupling
   in a new system: ferromagnetic Fe films separated by a spacer
   of amorphous Ge. Antiferromagnetic coupling occurs at spacer
   thicknesses between 20 and 25 Angstrom. It exhibits a striking
   temperature dependence which has a positive temperature
   coefficient and is fully reversible in the temperature range
   between 40 and 230 K. Our findings about the importance of the
   interfaces support the interpretation that resonant tunneling
   through localized states in the gap of the spacer mediate the
   magnetic exchange.
CR BALTENSPERGER W, 1990, APPL PHYS LETT, V57, P2954
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TC 11
BP 2217
EP 2220
PG 4
JI Phys. Rev. Lett.
PY 1998
PD MAR 9
VL 80
IS 10
GA ZA636
J9 PHYS REV LETT
UT ISI:000072385400048
ER

PT J
AU Zhang, XD
   Li, BZ
   Zhang, WS
   Pu, FC
TI Magnetoresistance and exchange coupling in a ferromagnetic
   tunnel junction with ferromagnetic layers of finite thickness
SO PHYSICAL REVIEW B-CONDENSED MATTER
NR 33
AB Based on a two-band model, we investigate the tunnel
   magnetoresistance (TMR) and interlayer exchange coupling (IEC)
   in a ferromagnet/insulator (semiconductor)/ferromagnet
   [FM/I(S)/FM] tunnel junction covered on both sides by
   nonmagnetic metal layers. Our results show that (1) the TMR
   oscillates with the thickness of ferromagnetic layers and can
   reach very large values under suitable conditions, which may in
   general not be reached in a FM/I(S)/FM tunnel junction with an
   infinitely thick ferromagnetic layer. This suggests an
   alternative way to obtain large TMR; (2) the bilinear coupling
   (J(1)) and biquadratic coupling (J(2)) decrease exponentially
   with the increase of barrier thickness, whereas they oscillate
   with the thickness of the FM layer, and J(2)/J(1) can reach
   considerably large values under some conditions; (3) the
   oscillations of the IEC and the TMR with the FM layer thickness
   are correlated owing to the quantum-size effect namely, the
   oscillation period and phase of the TMR are exactly the same as
   that of the IEC, Furthermore, the quantum-size effect can also
   give rise to a positive TMR (inverse spin-valve effect).
CR BARNAS J, 1996, PHYS REV B, V53, PR2956
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TC 4
BP 1090
EP 1096
PG 7
JI Phys. Rev. B-Condens Matter
PY 1998
PD JAN 1
VL 57
IS 2
GA YR357
J9 PHYS REV B-CONDENSED MATTER
UT ISI:000071487300064
ER

PT J
AU Xia, K
   Zhang, WY
   Lu, M
   Zhai, HG
TI Noncollinear interlayer coupling across a semiconductor spacer
SO PHYSICAL REVIEW B-CONDENSED MATTER
NR 18
AB Based on the extended s-d exchange model. which includes both
   isotropic and anisotropic spin interactions between conduction
   electrons and local states, we have derived analytically the
   interlayer coupling across a semiconductor spacer with a
   general band structure. Both Heisenberg-type and Dzyaloshinski-
   Moriya (DM) - type Ruderman-Kittel-Kasuya-Yosida-like
   interlayer coupling are obtained as a result of spin-orbit
   interaction. The interlayer coupling decreases exponentially
   with spacer thickness and the oscillation period depends on the
   band structure and orientation of spacers. Our result is
   different from previous theory; in particular, the DM-type
   interlayer exchange coupling offers a natural explanation to
   the noncollinear alignment of neighboring ferromagnetic layers
   as were observed in recent experiments on magnetic-
   semiconductor multilayer structures.
CR ABRIKOSOV AA, 1980, J LOW TEMP PHYS, V39, P217
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TC 1
BP 14901
EP 14904
PG 4
JI Phys. Rev. B-Condens Matter
PY 1997
PD DEC 15
VL 56
IS 23
GA YM239
J9 PHYS REV B-CONDENSED MATTER
UT ISI:000071043700009
ER

PT J
AU Hinarejos, JJ
   Castro, GR
   Segovia, P
   Alvarez, J
   Michel, EG
   Miranda, R
   RodriguezMarco, A
   SanchezPortal, D
   Artacho, E
   Yndurain, F
   Yang, SH
   Ordejon, P
   Adams, JB
TI Surface electronic structure of metastable FeSi(CsCl)(111)
   epitaxially grown on Si(111)
SO PHYSICAL REVIEW B-CONDENSED MATTER
NR 30
AB We report an investigation on the electronic structure of
   metastable, epitaxial FeSi films grown on Si(111). The
   electronic structure of the metastable silicides was probed
   with angle-resolved photoemission, and com-pared with
   theoretical calculations. We identify the silicide as FeSi
   crystallizing in the CsCl structure. Its surface is Fe
   terminated, and presents a prominent, strongly dispersing
   surface state at a binding energy of -3.5 eV in <(Gamma)over
   bar>. Its origin lies in the truncation of Fe bonds at the
   surface, and thus it has a major Fe d(z)2 content.
CR ALVAREZ J, 1992, PHYS REV B, V45, P14042
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TC 2
BP 16065
EP 16068
PG 4
JI Phys. Rev. B-Condens Matter
PY 1997
PD JUN 15
VL 55
IS 24
GA XJ271
J9 PHYS REV B-CONDENSED MATTER
UT ISI:A1997XJ27100023
ER

PT J
AU Fredrikze, H
   vanderGraaf, A
   Valkier, M
   Kohlhepp, J
   denBroeder, FJA
TI (Anti-)ferromagnetic coupling in Fe/Si multilayers from
   polarized neutron reflectometry
SO PHYSICA B
NR 6
AB Polarized neutron reflectometry data on Fe/Si multilayers are
   interpreted using strongly depth-dependent magnetization in the
   Fe layers. This behaviour is ascribed to a depth-dependent
   mixture of ferromagnetic and anti-ferromagnetic coupled regions
   in the sample.
CR DEHAAN VO, 1995, NUCL INSTRUM METH A, V362, P434
   FELCHER GP, 1987, REV SCI INSTRUM, V58, P609
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
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   LEKNER J, 1987, THEORY REFLECTION EL
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TC 1
BP 498
EP 499
PG 2
JI Physica B
PY 1997
PD JUN
VL 234
GA XG666
J9 PHYSICA B
UT ISI:A1997XG66600186
ER

PT J
AU Dekoster, J
   Bemelmans, H
   Degroote, S
   Moons, R
   Verheyden, J
   Vantomme, A
   Langouche, G
TI Epitaxial growth of and silicide formation in Fe/FeSi
   multilayers
SO JOURNAL OF APPLIED PHYSICS
NR 15
AB The structural properties of multilayers consisting of Fe
   layers separated by Si or FeSi layers grown with molecular beam
   epitaxy on MgO(001) and Si(lll) are reported. Rutherford
   backscattering and ion channeling are used to determine the
   crystallinity of the layers. We find evidence for epitaxy,
   alloying effects, and structural coherence. Conversion electron
   Mossbauer spectroscopy is utilized to investigate the silicide
   formation in the spacer layer of Fe/FeSi multilayers and at the
   interface of Fe/Si layers. The silicide formed in Fe/FeSi
   multilayers is characterized by a broad single line Mossbauer
   resonance which is characteristic for the metastable CsCl-FeSi
   phase. For Fe/Si multilayers the Mossbauer results indicate
   that FeSi compounds with clearly other hyperfine parameters
   than the CsCl phase are formed in the spacer. (C) 1997 American
   Institute of Physics.
CR BOST MC, 1985, J APPL PHYS, V58, P2696
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TC 4
BP 5349
EP 5351
PG 3
JI J. Appl. Phys.
PY 1997
PD APR 15
VL 81
IS 8
PN 2B
GA WV537
J9 J APPL PHYS
UT ISI:A1997WV53700242
ER

PT J
AU vanderGraaf, A
   Valkier, M
   Kohlhepp, J
   denBroeder, FJA
TI Interlayer coupling in Fe/Si multilayers studied by polarized
   neutron reflectometry
SO JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
NR 6
AB Results of a room temperature polarized neutron reflectometry
   (PNR) study of the depth-dependent magnetization in (A)FM-
   coupled Fe/Si multilayers (MLs) are presented. Simultaneous
   interpretation of PNR data measured at increasing field values,
   keeping the nuclear structure of the MLs equal, shows strongly
   depth-dependent magnetization profiles. At low fields the Fe
   layers at the substrate side turn out to be predominantly
   ferromagnetically (FM) coupled, while an antiferromagnetic
   (AFM) alignment of adjacent Fe layers is observed towards the
   top of the MLs. When the field is increased the region of FM
   (AFM) alignment grows (diminishes) by rotation of the
   magnetization in the individual Fe layers. The overall AFM
   alignment is more perfect for MLs with 1.4 nm thick Si layers
   than for 1.1 nm thick Si layers. These observations are in
   excellent agreement with magneto-optical Kerr effect and
   vibrating sample magnetometry (VSM) investigations [1] and can
   be explained by growth-induced pinholes, formed predominantly
   in the beginning of the sputtering process.
CR FELCHER GP, 1987, REV SCI INSTRUM, V58, P609
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   KOHLHEPP J, 1997, J MAGN MAGN MATER, V165, P431
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TC 5
BP 157
EP 160
PG 4
JI J. Magn. Magn. Mater.
PY 1997
PD JAN
VL 165
IS 1-3
GA WF862
J9 J MAGN MAGN MATER
UT ISI:A1997WF86200036
ER

PT J
AU Kohlhepp, J
   denBroeder, FJA
   Valkier, M
   vanderGraaf, A
TI Apparent strong biquadratic contributions to the interlayer
   exchange coupling in Fe/Si multilayers
SO JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
NR 13
AB We have studied the interlayer exchange coupling in sputtered
   Fe/Si multilayers both by integrating and by depth-sensitive
   magnetic methods. We find that the degrees of antiferromagnetic
   alignment of adjacent ferromagnetic layers and their rotation
   process in an applied magnetic field depend on the position in
   the multilayer stack. The observed vertical and lateral
   variations of the coupling properties are able to mimic an
   apparent strong biquadratic coupling.
CR BOBO JF, 1993, J MAGN MAGN MATER, V126, P440
   CARLISLE JA, 1996, PHYS REV B, V53, PR8824
   CHAIKEN A, 1996, PHYS REV B, V53, P5518
   DENBROEDER FJA, 1995, PHYS REV LETT, V75, P3026
   FULLERTON EE, 1992, J MAGN MAGN MATER, V117, PL301
   FULLERTON EE, 1996, PHYS REV B, V53, P5112
   GRADMANN U, 1994, J MAGN MAGN MATER, V137, P44
   INOMATA K, 1995, PHYS REV LETT, V74, P1863
   KOHLHEPP J, 1996, J MAGN MAGN MATER, V156, P261
   MATTSON JE, 1993, PHYS REV LETT, V71, P185
   SAITO Y, 1996, JPN J APPL PHYS 2, V35, PL100
   TOSCANO S, 1992, J MAGN MAGN MATER, V114, PL6
   VANDERGRAAF A, 1997, J MAGN MAGN MATER, V165, P157
TC 10
BP 431
EP 434
PG 4
JI J. Magn. Magn. Mater.
PY 1997
PD JAN
VL 165
IS 1-3
GA WF862
J9 J MAGN MAGN MATER
UT ISI:A1997WF86200110
ER

PT J
AU deVries, JJ
   Kohlhepp, J
   denBroeder, FJA
   Verhaegh, PA
   Jungblut, R
   Reinders, A
   deJonge, WJM
TI Structural and magnetic analysis of MBE-grown Fe/Si/Fe and
   Fe/Ge/Fe sandwiches
SO JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
NR 19
AB The structure and the interlayer exchange coupling in MBE-grown
   nominal Fe/Ge1-xFex/Fe (x = 0.0, 0.25, 0.33, 0.5) and Fe/Si/Fe
   sandwiches with wedge-shaped spacer layers were investigated.
   In the case of Fe/Si a sample with a wedge-shaped magnetic
   layer was also studied. From a structural analysis with LEED
   and from a magnetic analysis with the magneto-optical Kerr
   effect, it is concluded that the Si spacer transforms into an
   SiFe alloy with the deposition of Fe. A strong
   antiferromagnetic coupling is found in the case of Fe/Si, but
   no antiferromagnetic coupling is found for Fe/Ge1-xFex It
   appears that the coupling behavior in Fe/Si(SiFe)/Fe sandwiches
   as a function of spacer thickness is monotonous rather than
   oscillatory.
CR 1996, LANDOLTBORNSTEIN SOL, V3, P41
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TC 4
BP 435
EP 438
PG 4
JI J. Magn. Magn. Mater.
PY 1997
PD JAN
VL 165
IS 1-3
GA WF862
J9 J MAGN MAGN MATER
UT ISI:A1997WF86200111
ER

PT J
AU Kohlhepp, J
   Valkier, M
   vanderGraaf, A
   denBroeder, FJA
TI Mimicking of a strong biquadratic interlayer exchange coupling
   in Fe/Si multilayers
SO PHYSICAL REVIEW B-CONDENSED MATTER
NR 29
AB The antiferromagnetic interlayer exchange coupling properties
   of sputtered Fe/Si multilayers have been studied by
   magnetometry and spin-polarized neutron reflectometry. Both the
   degree of antiferromagnetic alignment of adjacent ferromagnetic
   layers at zero field and the strength of the coupling are found
   to depend on the position in the multilayer stack. It is shown
   that these interlayer coupling variations are able to imitate
   an apparent strong biquadratic coupling.
CR BAIBICH MN, 1988, PHYS REV LETT, V61, P2472
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TC 9
BP R696
EP R699
PG 4
JI Phys. Rev. B-Condens Matter
PY 1997
PD JAN 1
VL 55
IS 2
GA WD789
J9 PHYS REV B-CONDENSED MATTER
UT ISI:A1997WD78900013
ER