FN ISI Export Format VR 1.0 PT Journal AU Jin, P Tazawa, M Yoshimura, K Igarashi, K Tanemura, S Macak, K Helmersson, U TI Epitaxial growth of W-doped VO2/V2O3 multilayer on alpha- Al2O3(110) by reactive magnetron sputtering SO THIN SOLID FILMS NR 11 AB Multilayer epitaxy with a W-VO2 top layer over a bottom layer of which the crystal phase depends on the starting oxygen flow, was done on alpha -Al2O3(110) by reactively sputtering a V-W (1.6 at.% wt.) alloy target at linearly increasing oxygen flow without interrupting film growth. For the film deposited in the oxygen flow from 10 to 26 sccm, a W-VO2/W-V2O3 multilayer was formed on alpha -Al2O3(110) with the epitaxial relationship being (001)(f)//(110)(s), (110)//(001)(s) for W-V2O3, and (010)(f)//(110)(s), (100)(f)//(001)(s) for W-VO2 where f and s denote the film and substrate, respectively. The formation of a triple domain structure was confirmed in the W-VO2 top layer due to the strong influence from the symmetry of the substrate. The multilayer shows phase transition behavior differing from the single layer film, which was presumably due to the effects of W-doping, compositional gradient, and strain. (C) 2000 Elsevier Science S.A. All rights reserved. CR CHANG HLM, 1991, APPL SURF SCI, V48, P12 GOODENOUGH JB, 1971, J SOLID STATE CHEM, V3, P490 JIN P, 1997, J VAC SCI TECHNOL 1, V15, P1113 JIN P, 1995, JPN J APPL PHYS PT 1, V34, P2459 JIN P, 1998, THIN SOLID FILMS, V324, P151 JORGENSON GV, 1986, SOL ENERG MATER, V14, P205 MCWHAN DB, 1970, PHYS REV B, V2, P3734 MORIN FJ, 1959, PHYS REV LETT, V3, P34 PARTLOW DP, 1991, J APPL PHYS, V70, P443 SCHULER H, 1997, THIN SOLID FILMS, V299, P119 WANG X, 1997, J CRYST GROWTH, V171, P401 TC 0 BP 128 EP 131 PG 4 JI Thin Solid Films PY 2000 PD OCT 31 VL 375 IS 1-2 GA 369LU J9 THIN SOLID FILMS UT ISI:000165067400029 ER PT Journal AU Iskhakov, RS Komogortsev, SV Balaev, AD Chekanova, LA TI Dimensionality of a system of exchange-coupled grains and magnetic properties of nanocrystalline and amorphous ferromagnets SO JETP LETTERS NR 15 AB Characteristics of random magnetic anisotropy in ferromagnetic films of amorphous Co90P10 and nanocrystalline Ni75C25 , Fe80B4C16 , and Co80C20 alloys and also in multilayer films [Co93P7(x)/Pd(14 Angstrom)](20) and [Co90P10(x)/Pd(14 Angstrom)](20) obtained by various technological procedures were studied experimentally. It was found that the spatial dimensionality (d) of the system of ferromagnetically coupled grains (2R(c)) in the materials under study determined the exponent in the power dependence of the approach of magnetization to saturation in the region of fields H < 2A / MRc2. The dependence DeltaM similar to H-1/2 was observed for nanocrystalline and amorphous films with a three-dimensional grain arrangement. The approach to saturation in multilayer films with a two-dimensional grain arrangement in an individual magnetic layer follows the law DeltaM similar to H-1. The main micromagnetic characteristics of random anisotropy, such as the ferromagnetic correlation radius R-f and the average anisotropy [K] of a ferromagnetic domain with a size of 2R(f) , were determined for multilayer Co/Pd films. Correlation was found between the coercive field and these characteristics of random anisotropy. (C) 2000 MAIK "Nauka / Interperiodica". CR AKULOV NS, 1931, Z PHYS, V69, P278 ALBEN R, 1978, J APPL PHYS, V49, P1653 CHERNYKH AG, 1989, IZV AN SSSR FIZ, V53, P622 CHUDNOVSKY EM, 1983, J MAGN MAGN MATER, V40, P21 GRINSTAFF MW, 1993, PHYS REV B, V48, P269 HERZER G, 1990, IEEE T MAGN, V26, P1397 IGNATCHENKO VA, 1992, FIZ MET METALLOVED, P75 IGNATCHENKO VA, 1982, ZH EKSP TEOR FIZ, V55, P878 ISKHAKOV RS, 1999, JETP LETT+, V70, P736 ISKHAKOV RS, 1997, JETP LETT+, V66, P517 ISKHAKOV RS, 2000, P 17 INT SCH WORKSH, P540 LOFFLER JF, 1998, PHYS REV B, V57, P2915 OSHEA MJ, 1990, J APPL PHYS, V67, P5769 TEJADA J, 1990, PHYS REV B, V42, P898 THOMAS L, 1995, J MAGN MAGN MATER, V140, P437 TC 1 BP 304 EP 307 PG 4 JI Jetp Lett. PY 2000 VL 72 IS 6 GA 369BG J9 JETP LETT-ENGL TR UT ISI:000090151500008 ER PT Journal AU Wu, LJ Honda, N Ouchi, K TI Formation of reversed magnetic domains by recording in a Co/Pd multilayer film with perpendicular magnetic anisotropy SO IEICE TRANSACTIONS ON ELECTRONICS NR 8 AB A Co/Pd multilayer film with perpendicular coercivity of 2.2 kOe and remanence ratio (SQ) of unity was prepared by electron beam evaporation in vacuum. In the MFM im- age of signal patterns of 4 kFRPI recorded using a ring-type MIG head, many reversed domains were observed. However, when the film was magnetized along the film normal direction using an electromagnet (H = -13 kOe), only few reversed magnetic domains were observed, which was consistent with SQ = 1. Therefore, the reversed domains in the signal patterns were induced in the recording process. de erasing was also studied with the magnetic field inclined to the film normal. The domain structures were almost the same when the perpendicular component of the field was kept constant while the in-plane component was varied, implying that the in-plane field component did not contribute to the formation of the reversed domains. It was found that reversed magnetic domains were easily induced even by a weak reversing magnetic field applied along the film normal. Hence, although the possibility of an insufficient recording head field was not excluded, it seemed more likely that the reversed magnetic domains in the signal patterns were caused by some erasing effect of the ring-type MIG head. Fora Co/Pd multilayer medium with a negative nucleation field in the perpendicular M-H loop, a stronger reversing field was needed to induce the reversed magnetic domains. No reversed magnetic domains were observed in the MFM image for signal patterns of 4 kFRPI in this medium, indicating that a negative nucleation field was effective to suppress the formation of reversed magnetic domains. CR ARIAKE J, 1998, ELECTROCHEMICAL SOC, P242 FUTAMOTO M, 1996, IEEE T MAGN 1, V32, P3789 GLIJER P, 1996, IEEE T MAGN 1, V32, P3557 HONDRICH KO, 1993, SPIEGEL, V1, P29 MURAOKA H, 1993, J MAGN MAGN MATER, V120, P323 NEW RMH, 1995, IEEE T MAGN, V31, P3805 WU LJ, 1999, IEEE T MAGN 1, V35, P2775 ZHU JG, 1994, IEEE T MAGN, V30, P4242 TC 0 BP 1511 EP 1516 PG 6 JI IEICE Trans. Electron. PY 2000 PD SEP VL E83C IS 9 GA 358UC J9 IEICE TRANS ELECTRON UT ISI:000089574700025 ER PT Journal AU Uchida, M Honda, N Ouchi, K TI Effect of recording layer thickness on read/write performances of Co/Pd multilayer perpendicular magnetic recording media SO IEICE TRANSACTIONS ON ELECTRONICS NR 10 AB The medium noise of single-layer perpendicular recording media is known to be suppressed by reducing the magnetic domain size and achieving a higher squareness ratio (M-r/M-s = SQ) in the perpendicular M-H loop. The media with smaller domain sizes exhibit a small slope at H-c in the M-H loop due to exchange de-coupling between adjacent grains, which requires a sharp head field to acquire high recording performances. Reduction of the medium thickness would be effective for recording as only a sharp head field near the head surface could be used. Thus, the effects of reduced recording layer thickness in single-layer perpendicular recording media on read/write performances were investigated using Co/Pd multilayer media with a small loop slope having thickness, delta, of 46, 22 and 10 nm, and with a steeper loop slope having delta of 40 and 10 nm. It was found that the recording performance on small loop slope media could be improved in terms of signal level by reducing the recording layer thickness, which indicated that the recording on the media was sensitive to the recording head field. The results in the simulation analysis were similar to those obtained experimentally, indicating that the change in recording layer thickness could be mainly regarded as that in the head-medium spacing. Thinner media with steeper loop slopes could acquire a narrower dipulse width. The recording resolution of the present media, however, was determined under the influence of the domain structure and the size. Finally, for media with small loop slopes, the same SNR of 38 dB at 100 kFRPI was obtained for thicknesses of 22 and 10 nm, which was larger than that for a thick medium of 46 nm thickness by 8 dB. For both the steep loop slope media, the obtained SNR was 35 dB at 100 kFRPI. CR HONDA N, 1999, IEICE T ELECTRON EC, V82, P2184 HONDA N, 1997, IEICE T ELECTRON EC, V80, P1180 HONDA N, 1999, J MAGN MAGN MATER, V193, P106 HONDA N, 1997, J MAGN SOC JPN, V21, P505 IWASAKI S, 1997, J MAGN SOC JPN, V21, P1 NAKAMURA Y, 1996, IEICE T C2, V79, P204 SUZUKI T, 1999, IEEE T MAGN 1, V35, P2748 WU L, 1997, J MAGN SOC JPN, V21, P301 YANASE S, 1999, J MAGN SOC JPN, V23, P989 YANASE S, 1999, MR9868 IEICE TC 0 BP 1522 EP 1529 PG 8 JI IEICE Trans. Electron. PY 2000 PD SEP VL E83C IS 9 GA 358UC J9 IEICE TRANS ELECTRON UT ISI:000089574700027 ER PT Journal AU Hwang, SC Waser, R TI Study of electrical and mechanical contribution to switching in ferroelectric/ferroelastic polycrystals SO ACTA MATERIALIA NR 41 AB Polarization switching in a polycrystalline ferroelectric/ferroelastic ceramic is simulated with a finite element model. It is assumed that a crystallite switches if the reduction in potential energy of the polycrystal exceeds a critical energy barrier per unit volume of switching material. Each crystallite, represented by a cubic element in a finite element mesh, is a single domain that switches completely without a simulated domain wall motion. The possible dipole directions of each crystallite are assigned randomly subject to crystallographic constraints. The model accounts for electric field induced (i.e. ferroelectric) switching and stress induced (i.e, ferroelastic) switching without piezoelectric interaction. Different weights for the mechanical and electrical contribution to switching are selected phenomenologically to simulate electric displacement vs electric field and strain vs electric field of a ceramic lead lanthanum zirconate titanate (PLZT). Although the critical energy barriers for 90 degrees and 180 degrees switching are assumed to be the same, 90 degrees switching is favored when the electrical contribution to switching (i.e. electrical energy) is dominant, but 180 degrees switching is favored when the mechanical contribution to switching (i.e. elastic strain energy) is dominant. With increasing mechanical contribution and decreasing electrical contribution, the simulated electric displacement deviates from the Rayleigh law under a low applied electric field, and the shape of a switching region (or a process zone) changes from a prolonged ellipsoid to a sphere. (C) 2000 Published by Elsevier Science Ltd on behalf of Acta Metallurgica Inc. CR ABURATANI H, 1994, JPN J APPL PHYS PT 1, V33, P3091 AHN CH, 1997, SCIENCE, V276, P1100 ARLT G, 1996, FERROELECTRICS, V189, P91 ARLT G, 1990, J MATER SCI, V25, P2655 AVRAMI M, 1941, J CHEM PHYS, V9, P177 AVRAMI M, 1940, J CHEM PHYS, V8, P212 AVRAMI M, 1939, J CHEM PHYS, V7, P1103 CAO HC, 1993, J AM CERAM SOC, V76, P890 CHAN KH, 1994, P SOC PHOTO-OPT INS, V2190, P194 CHEN X, 1997, ACTA MATER, V45, P3181 COOK RD, 1989, CONCEPTS APPL FINITE DAMJANOVIC D, 1997, J APPL PHYS, V82, P1788 DEVONSHIRE AF, 1949, PHILOS MAG, V40, P1040 GANPULE CS, 1999, APPL PHYS LETT, V75, P409 GONG X, 1996, J MECH PHYS SOLIDS, V44, P751 GRUVERMAN A, 1997, APPL PHYS LETT, V71, P3492 HIDAKA T, 1996, APPL PHYS LETT, V68, P2358 HWANG SC, 1995, ACTA METALL MATER, V43, P2073 HWANG SC, 1998, FERROELECTRICS, V211, P177 HWANG SC, IN PRESS P SPIE SMAR HWANG SC, 1999, INT J SOLIDS STRUCT, V36, P1541 HWANG SC, 2000, J APPL PHYS, V87, P869 HWANG SC, 1998, J APPL PHYS, V84, P1530 HWANG SC, 1977, THESIS U CALIFORNIA ISHIBASHI Y, 1971, J PHYS SOC JPN, V31, P506 JAFFE B, 1971, PIEZOELECTRIC CERAMI JONA F, 1962, FERROELECTRIC CRYSTA KEVE ET, 1975, J APPL PHYS, V46, P810 KOVALEV S, 1998, ACTA MATER, V46, P3015 LANDAU LD, 1960, ELECTRODYNAMICS CONT LI SP, 1994, J MATER SCI, V29, P1290 MAUGIN GA, 1988, CONTINUUM MECH ELECT MOULSON AJ, 1990, ELECTROCERAMICS MAT PAN WY, 1988, FERROELECTRICS, V88, P1 PARK SB, 1995, J AM CERAM SOC, V78, P1475 RANDALL CA, 1998, J AM CERAM SOC, V81, P677 RANDALL CA, 1987, J MATER SCI, V22, P925 RAYLEIGH, 1990, PHIL MAG S5, V23, P225 SCOTT JF, 1989, SCIENCE, V246, P1400 STRATTON JA, 1941, ELECTROMAGNETIC THEO TANAKA M, 1998, FERROELECTRICS LETT, V24, P13 TC 0 BP 3271 EP 3282 PG 12 JI Acta Mater. PY 2000 PD JUL 17 VL 48 IS 12 GA 352CK J9 ACTA MATER UT ISI:000089196800025 ER PT Journal AU Heidkamp, M Erskine, JL TI High-speed high spatial resolution magneto-optic Kerr effect polarimeter/microscope for studies of ultrathin magnetic structures SO REVIEW OF SCIENTIFIC INSTRUMENTS NR 18 AB A magneto-optic Kerr effect polarimeter designed to study the dynamics of magnetization reversal in ultrathin films, multilayer films, and microstructures is described. The polarimeter is integrated into a long focal-length charge coupled device (CCD) camera based Kerr microscope that permits viewing domain structures and facilitates positioning of the focused polarimeter beam on microstructures in ultrahigh vacuum. Diffraction-limited spatial resolution, based on the f- number of the respective objective lenses, is achieved by the microscope (similar to 1 mu m) and polarimeter (similar to 5 mu m). The polarimeter is capable of measuring continuous wave or repetitive transient ultrathin film magnetic response at sampling rates of 40 million samples/s (MS/s) over a micron- scale region defined by the illuminating spot. Hysteresis loops generated by ultrathin (monolayer) films and microstructures can be measured at high signal-to-noise ratio over a nine- decade range of drive frequencies. (C) 2000 American Institute of Physics. [S0034-6748(00)00708-5]. CR BADER SD, 1994, ULTRATHIN MAGNETIC S, V2, P294 BALLENTINE CA, 1989, APPL PHYS A-SOLID, V49, P459 BEAGLEHOLE D, 1988, REV SCI INSTRUM, V59, P2557 COWBURN RP, 1988, APPL PHYS LETT, V73, P3947 FREEMAN MR, 1992, APPL PHYS LETT, V60, P2555 FREEMAN MR, 1998, J APPL PHYS 2, V83, P6217 FUMAGALLI P, 1998, APPL PHYS LETT, V72, P2803 GADETSKY S, 1996, J APPL PHYS 2B, V79, P5687 GIERGIEL J, 1996, REV SCI INSTRUM, V67, P2937 HEIDKAMP M, 1998, THESIS U TEXAS AUSTI MCCORD J, 1995, J MAGN MAGN MATER, V148, P244 RAVE W, 1987, J MAGN MAGN MATER, V65, P7 SCHAFER R, 1995, J MAGN MAGN MATER, V148, P226 SCHMIDT F, 1985, IEEE T MAGN, V21, P1596 SCHULTZ MD, 1993, J APPL PHYS, V73, P5776 SHIEH HPD, 1988, IEEE T MAGN, V24, P2464 SUEN J, 1997, PHYS REV LETT, V78, P3567 SUEN JS, 1999, PHYS REV B, V59, P4249 TC 0 BP 3141 EP 3147 PG 7 JI Rev. Sci. Instrum. PY 2000 PD AUG VL 71 IS 8 GA 344XW J9 REV SCI INSTR UT ISI:000088787200030 ER PT Journal AU Aliev, FG Schad, R Bruynseraede, Y Villar, R TI Electron interaction with domain walls in antiferromagnetically coupled multilayers SO PHYSICA B NR 5 AB Magnetization reversal in multilayers occurs through the nucleation and propagation of domain walls (DWs). We find that in antiferromagnetically coupled [Fe/Cr](10) multilayers in a wide temperature interval above 1.9 K, the resistivity associated with DW scattering, rho(DW), varies as rho(DW)(T) = rho(DW)(0) - AT(alpha) with the exponent alpha similar or equal to 0.7-1. This possibly indicates the presence of quantum interference effects in the quasiballistic electron transport through domain walls. (C) 2000 Elsevier Science B.V. All rights reserved. CR BAIBICH MN, 1988, PHYS REV LETT, V61, P2472 FERT A, 1995, J MAGN MAGN MATER, V140, P1 LYANDAGELLER Y, 1998, PHYS REV LETT, V81, P3215 MATTSON JE, 1991, PHYS REV B, V44, P9378 VANHOOF JBAN, 1999, PHYS REV B, V59, P138 TC 0 BP 1243 EP 1244 PG 2 JI Physica B PY 2000 PD JUL VL 284 PN 2 GA 320WD J9 PHYSICA B UT ISI:000087423100061 ER PT Journal AU Lohau, J Kirsch, S Carl, A Wassermann, EF TI Quantitative determination of the magnetization and stray field of a single domain Co/Pt dot with magnetic force microscopy SO APPLIED PHYSICS LETTERS NR 30 AB The z-component of both the magnetization and the stray field of a nanometer sized single domain magnetic Co/Pt multilayer dot with perpendicular magnetic anisotropy is determined quantitatively within the point probe approximation by magnetic force microscopy (MFM). The MFM tip used is calibrated by probing omega-shaped nanosized current rings fabricated by electron-beam lithography. Since the stray field geometry of the dot and the current rings are similar, the calibrated tip can be used to determine quantitatively the magnetization and the stray field of the dot with perpendicular magnetic anisotropy. (C) 2000 American Institute of Physics. [S0003- 6951(00)04421-1]. CR ALLENSPACH R, 1987, Z PHYS B CON MAT, V67, P125 BABCOCK K, 1994, IEEE T MAGN, V30, P4503 BABCOCK KL, 1996, APPL PHYS LETT, V69, P705 BROWN WF, 1963, MICROMAGNETICS CHANG AM, 1992, APPL PHYS LETT, V61, P1974 GODDENHENRICH T, 1990, APPL PHYS LETT, V57, P2612 HARTMANN U, 1989, PHYS LETT A, V137, P475 HUG HJ, 1998, J APPL PHYS 1, V83, P5609 KIRTLEY JR, 1995, APPL PHYS LETT, V66, P1138 KONG LS, 1997, APPL PHYS LETT, V70, P2043 KONG LS, 1997, J APPL PHYS 2B, V81, P5026 KREUZER S, 1998, THIN SOLID FILMS, V318, P219 LOHAU J, 1999, J APPL PHYS, V86, P3410 MARTIN Y, 1987, APPL PHYS LETT, V50, P1455 NEW RMH, 1994, J VAC SCI TECHNOL B, V12, P3196 PHILLIPS GN, 1997, J MAGN MAGN MATER, V175, P115 POHM AV, 1988, IEEE T MAGN, V24, P3117 POTTER RI, 1970, J APPL PHYS, V41, P1647 PRINZ G, 1995, PHYSICS TODAY APR, P24 PROKSCH R, 1996, APPL PHYS LETT, V69, P2599 PROKSCH RB, 1995, APPL PHYS LETT, V66, P2582 PROKSCH RB, 1994, IEEE T MAGN, V30, P4467 RUGAR D, 1990, J APPL PHYS, V68, P1169 SAENZ JJ, 1987, J APPL PHYS, V62, P4293 SMYTH JF, 1991, J APPL PHYS, V69, P5262 THIAVILLE A, 1997, J APPL PHYS, V82, P3182 THIELEN M, 1998, IEEE T MAGN 1, V34, P1009 WASSERMANN EF, 1998, J APPL PHYS, V83, P1753 WERNSDORFER W, 1995, J MAGN MAGN MATER, V145, P33 ZHONG Q, 1993, SURF SCI LETT, V290, P688 TC 1 BP 3094 EP 3096 PG 3 JI Appl. Phys. Lett. PY 2000 PD MAY 22 VL 76 IS 21 GA 314QF J9 APPL PHYS LETT UT ISI:000087066500040 ER PT Journal AU Sablik, MJ Beech, RS Tondra, M TI Designing a giant magnetoresistance field sensor via inferences from a giant magnetoresistance hysteresis model SO JOURNAL OF APPLIED PHYSICS NR 8 AB By using a model for giant magnetoresistance (GMR) hysteresis and a model for Barkhausen noise, a magnetic hysteresis model is used to map the effects of magnetic hysteresis on GMR and on accompanying magnetic noise in a GMR magnetic field sensor. Two magnetic noise sources potentially exist in the field sensor: (1) the GMR multilayer material and (2) permalloy field concentrators. The GMR material typically shows a coercivity at H(c)congruent to 1 kA/m, much larger than H-c=0.012 kA/m of permalloy. Because permalloy has a very large maximum permeability, it is a much larger magnetic noise source than the GMR material, and would greatly affect sensor operation if operated near H=0. By operating with a bias field well above 1 kA/m, one can operate away from both noise sources. Because the increasing and decreasing arms of the magnetic hysteresis tail of the GMR material are each approximately proportional to \H\(1/2) over a large field range, the model shows that increasing and decreasing portions of the GMR vs H hysteresis curve turn out to be linear, parallel to each other, for the operating field region. If the GMR curve is linear in a region away from H-c, a bias field operation in this range would mean that the sensor would not only be nearly noiseless (save for Johnson noise) but also would exhibit linear change in field under an applied field H and could easily be calibrated to measure H. Thus, the modeling points the way to low noise GMR field sensor design. In practice, it is found that biasing at fields halfway down the GMR curve does indeed produce a much quieter measurement than near zero bias field. (C) 2000 American Institute of Physics. [S0021-8979(00)32908-5]. CR ALESSANDRO B, 1990, J APPL PHYS, V68, P2901 ALESSANDRO B, 1990, J APPL PHYS, V68, P2908 REIF F, 1965, FUNDAMENTALS STAT TH, P560 SABLIK MJ, 1997, IEEE T MAGN, V33, P2375 SABLIK MJ, 1993, IEEE T MAGN, V29, P2113 SABLIK MJ, 1996, J APPL PHYS, V79, P963 SABLIK MJ, 1993, J APPL PHYS, V74, P5898 SCHNEIDER CS, 1992, IEEE T MAGN, V28, P2626 TC 0 BP 5347 EP 5349 PG 3 JI J. Appl. Phys. PY 2000 PD MAY 1 VL 87 IS 9 PN 2 GA 308RT J9 J APPL PHYS UT ISI:000086727200226 ER PT Journal AU Schrefl, T Fidler, J Zehetmayer, M TI Micromagnetic simulation of 360 degrees domain walls in thin Co films SO JOURNAL OF APPLIED PHYSICS NR 13 AB A moving mesh finite element technique is applied to simulate the formation and annihilation of 360 degrees wall structures in thin Co films. Adaptive refinement and coarsening of the finite element mesh controls the discretization error during the simulation of domain wall movement. Elements are refined in regions with high variation of the magnetization, whereas elements are taken out where the magnetization is uniform. The calculated Neel walls have very wide tails and have an extension of about 15-20 nm. The motion of domain walls through the sample gives rise to the formation of 360 degrees domain walls. They are formed when a Bloch line in a domain wall is caught at a nonmagnetic defect in the sample. Pinholes with an extension greater than 6 nm are sufficient to trap a Bloch line. The width of the 360 degrees walls is found to be in the range of 40 to 50 nm. The stability of the 360 degrees walls depends on the strength of the pinning of the Bloch lines. The field required to annihilate the 360 degrees walls increases linearly with the size of the nonmagnetic defect. (C) 2000 American Institute of Physics. [S0021-8979(00)81608-4]. CR BERKOV DV, 1998, J MAGN MAGN MATER, V182, P81 BEY J, 1995, COMPUTING, V55, P355 BROWN WF, 1963, MICROMAGNETICS FELDKELLER E, 1962, Z ANGEW PHYS, V14, P195 FREDKIN DR, 1990, IEEE T MAGN, V26, P415 GILBERT TL, 1955, PHYS REV, V100, P1243 HACKBUSCH W, 1989, COMPUTING, V41, P277 HEYDERMAN LJ, 1994, J APPL PHYS, V76, P6613 HEYDERMAN LJ, 1994, J MAGN MAGN MATER, V138, P344 HUBERT A, MAGNETIC DOMAINS SCHAFER R, 1993, IEEE T MAGN, V29, P2738 SCHOLZ W, 1999, J MAGN MAGN MATER, V196, P933 SOMMEIJER BP, 1998, J COMPUT APPL MATH, V66, P315 TC 0 BP 5517 EP 5519 PG 3 JI J. Appl. Phys. PY 2000 PD MAY 1 VL 87 IS 9 PN 2 GA 308RT J9 J APPL PHYS UT ISI:000086727200273 ER PT Journal AU McCord, J Westwood, J TI Domain formation in Fe-N multilayers SO JOURNAL OF APPLIED PHYSICS NR 8 AB We prepared a series of sputtered FeN single layer films, and bilayer and multilayer films laminated with alumina, in which both the Fe-N thickness and the alumina interlayer thickness varied. The films were characterized by quantitative magneto- optical Kerr-microscopy and inductive measurements. We found a strong influence of interlayer coupling and FeN thickness on the domain formation in these layers. For single layers a transition from cross-tie walls to Bloch-type walls for increasing ferromagnetic layer thickness was observed. The multilayer films displayed a wide range of different types of coupled Neel walls depending on interlayer thickness. These include superimposed, compensated, and 360 degrees walls. The change in domain wall structure strongly influences the coercivity of the thin film systems. The relative coupling strength between the magnetic films is calculated from the domain wall width of the superimposed Neel walls. Magnetic in- plane deviation strongly depends on the sign of magnetostriction. The observed magnetic dispersion leads to an increase in the minimum magnetic switching time. The observed micromagnetic structures result in unwanted irregular domain patterns in structured samples. Both are indicating limitations for applications in thin film recording heads. (C) 2000 American Institute of Physics. [S0021-8979(00)76608-4]. CR BACK CH, 1999, IEEE T MAGN 1, V35, P637 GUPTA HO, 1991, J APPL PHYS, V69, P4529 HEYDERMAN LJ, 1991, J MAGN MAGN MATER, V95, P125 JAYASEKARA WP, 1998, IEEE T MAGN 1, V34, P1438 KRYDER MH, 1993, J APPL PHYS, V73, P621 LABRUNE M, 1995, J MAGN MAGN MATER, V151, P125 SILVA TJ, 1999, IEEE T MAGN 1, V35, P671 SIN K, 1996, IEEE T MAGN 1, V32, P3509 TC 0 BP 6502 EP 6504 PG 3 JI J. Appl. Phys. PY 2000 PD MAY 1 VL 87 IS 9 PN 3 GA 308TK J9 J APPL PHYS UT ISI:000086728800200 ER PT Journal AU Unguris, J Tulchinsky, D Kelley, MH Borchers, JA Dura, JA Majkrzak, CF Hsu, SY Loloee, R Pratt, WP Bass, J TI Magnetic depth profiling Co/Cu multilayers to investigate magnetoresistance (invited) SO JOURNAL OF APPLIED PHYSICS NR 15 AB The magnetic microstructure responsible for the metastable high resistance state of weakly coupled, as-prepared [Co(6 nm)/Cu(6 nm)](20) multilayers was analyzed using polarized neutron reflectivity and scanning electron microscopy with polarization analysis (SEMPA). This article focuses and expands on the SEMPA measurements. In multilayer structures such as these, SEMPA can be combined with ion milling to directly image the layer-by- layer magnetization and quantitatively depth profile the interlayer magnetic domain correlations. We found that in the as-prepared Co/Cu multilayer, the domains are about 1 mu m in size and the magnetizations in adjacent layers are almost completely oppositely aligned. The relative magnetoresistance derived from this measured degree of anticorrelation is in agreement with the measured magnetoresistance. (C) 2000 American Institute of Physics. [S0021-8979(00)20208-9]. 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PY 2000 PD MAY 1 VL 87 IS 9 PN 3 GA 308TK J9 J APPL PHYS UT ISI:000086728800246 ER PT Journal AU Ma, SC Lo, CK Yao, YD Chiang, DY Ying, TF Huang, DR TI The GMR effect of Cu/Co multilayer on Si(100) SO JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS NR 6 AB (Cu/Co)(10) was deposited on SiO2/Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO2/Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R-H loop was higher than that in major R-H loop. This could be due to the increment of domain wall which enhances the electrons scattering. (C) 2000 Elsevier Science B.V. All rights reserved. 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