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Applied Physics Letters -- July 19, 1999 -- Volume 75, Issue 3, pp. 346-348

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Transmission electron microscopy investigation of Co thin films on
GaAs(001)

     M. A. Mangan, G. Spanos, T. Ambrose, and G. A. Prinz
     Materials Science and Technology Division, Naval Research Laboratory,
     Washington, DC 20375

(Received 25 February 1999; accepted 24 May 1999)

Transmission electron microscopy (TEM) observations of the microstructure
of epitaxial Co thin films on GaAs(001) are reported. Cross-sectional TEM
confirmed both bcc-Co and hcp-Co exist in a single 345 Å film. During film
growth by molecular beam epitaxy, the epitaxial bcc-Co layer forms first at
the GaAs interface, and hcp-Co islands subsequently form at the free
surface of the bcc-Co layer when it reaches a thickness of about 145 Å. The
bcc-Co film is single crystal at early stages of growth, but later may
develop into multiple bcc crystals. The final hcp-Co grain size is roughly
15–20 nm, and selected area electron diffraction showed these grains are
strongly textured. Four previously unreported variants of the hcp-Co/GaAs
orientation relationship were observed in which the c axis of the hcp unit
cell lies out of the plane of the film.

PII: S0003-6951(99)02529-2
doi:10.1063/1.124370
PACS: 68.55.Jk, 81.15.Hi, 68.35.Bs        Additional Information

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