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Journal of Applied Physics -- April 15, 1996 -- Volume 79, Issue 8 pp. 6533-6535

Enhancement of magnetoresistance in Co(100)/Cr(211) bilayered films on MgO(110)

Y. D. Yao and Y. Liou

Institute of Physics, Academia Sinica, Taipei 115, Taiwan, Republic of China

J. C. A. Huang

Department of Physics, National Cheng Kung University, Tainan 701, Taiwan, Republic of China

S. Y. Liao, I. Klik, W. T. Yang, C. P. Chang, and C. K. Lo

Institute of Physics, Academia, Sinica, Taipei 115, Taiwan, Republic of China

Epitaxial Co/Cr bilayered films have been successfully grown on the MgO(100) and MgO(110) substrates by molecular-beam epitaxy. According to the reflection high-energy electron-diffraction and x-ray-diffraction measurements the crystal structure of the film depends on orientation of the buffer and substrate. Epitaxial growth of biaxial Co(110)/Cr(100) on MgO(100) substrate and of uniaxial Co(100)/Cr(211) on MgO(110) substrate has been confirmed. The anisotropy magnetoresistance (AMR) is strongly influenced by the orientation of the Cr buffer. In Co(110)/Cr(100) on MgO(100) AMR is isotropic for all in-plane fields. However, for Co(100)/Cr(211) on MgO(110) we observed enhancement of AMR along the easy axis for temperatures below 150 K, while along the hard axis AMR has a local maximum at about 150 K. The easy axis data suggest that the longitudinal spin density wave of Cr and the crystal anisotropy of Co on Cr(211) plane dominate the enhancement of the AMR. ©1996 American Institute of Physics.

PII: S0021-8979(96)57808-1
DOI: 10.1063/1.361937
PACS: 75.70.Pa, 81.15.Hi, 75.30.Fv        Additional Information