Surface Science
Volume 327, Issues 1-2,
1 April 1995,
Pages 9-16
DOI:
10.1016/00396-0289(40)08302-
0039-6028(94)00830-2
Epitaxial oxide formation on Cr(110) films
H. Zabela, *, A. Stierlea and P. Bödekera
a Ruhr-Universität Bochum, Fakultät für Physik und Astronomie, Institut für Experimentalphysik, Festkörperphysik 44780 Bochum Germany
Received 17 October 1994; accepted 12 December 1994. Available online 17 February 2000.
Abstract
We have investigated the oxidation of Cr(110) at 330°C and high oxygen exposures by surface sensitive X-ray scattering. Single crystal Cr(110) films prepared by molecular beam epitaxy (MBE) were used. Via in-situ X-ray reflectivity measurements the exact oxide thickness could be determined. New information about the metal/oxide interface was obtained: the oxidation is proceeding without roughening of the interface and the Cr(110) layers are oxidized in a layer-by-layer fashion. The number of Cr(110) planes can be counted before and after oxidation from in-situ Laue oscillation measurements of the Cr(110) Bragg peak. This reveals detailed information about the material consumption by the oxidation process. Additional ex-situ in-plane Bragg scans under grazing incidence show that an epitaxial, orthorhombic Cr2O3 layer in (0001) orientation is formed. The in-plane structure of the oxide layer can be improved by annealing in ultra-high vacuum.
Author Keywords: Chromium; Chromium oxides; Corrosion; Epitaxy; Metal-semiconductor interfaces; Molecular beam epitaxy; Oxidation; Single crystal epitaxy; X-ray scattering; X-ray diffraction; X-ray reflection
*Corresponding author.
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