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Phys. Rev. Lett. 74, 1863–1866 (1995)

[Issue 10 – 6 March 1995 ]

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Magnetoresistance Associated with Antiferromagnetic Interlayer Coupling Spaced by a Semiconductor in Fe /Si Multilayers

K. Inomata, K. Yusu, and Y. Saito

Advanced Research Laboratory, Research and Development Center, Toshiba Corporation, Kawasaki 210, Japan

Multilayer Fe/Si films with constant Fe thickness (2.6 nm) and variable Si thickness are investigated. Negative magnetoresistance is observed and two different temperature dependences are found as a function of Si thickness. For t_Si = 1.2 nm, the magnetoresistance decreases with temperature decrease. For t_Si>1.5 nm, the magnetoresistance increases (weakly) with temperature decrease. The magnetoresistance is attributed to spin-dependent scattering caused by antiferromagnetic layer coupling across a semiconducting spacer: narrow gap iron silicide for thin Si spacer layers and amorphous Si for thicker spacer layers.

©1995 The American Physical Society

URL: http://link.aps.org/abstract/PRL/v74/p1863
DOI: 10.1103/PhysRevLett.74.1863
PACS: 75.50.Rr, 72.15.Gd, 73.40.Sx, 75.30.Et

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See Also:

Comment: F. J. A. den Broeder and J. Kohlhepp, Comment on "Magnetoresistance Associated with Antiferromagnetic Interlayer Coupling Spaced by a Semiconductor in Fe/Si Multilayers", Phys. Rev. Lett. 75, 3026 (1995).

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