Journal of Applied Physics
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      Journal of Applied Physics -- May 15, 1994 -- Volume 75, Issue 10,
      pp. 6501-6503

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      Electron-energy-loss spectroscopy of Fe thin films on GaAs(001)

    J. Yuan, E. Gu, M. Gester, J. A. C. Bland, and L. M. Brown Cavendish
Laboratory, Cambridge CB3 OHE, United Kingdom

An electron-microscopy-based technique of electron-energy-loss
spectroscopy (EELS) has been used to characterize electronic and
magnetic properties of ultrathin Fe films grown on GaAs(100) surface, as
a function of the film thickness. Large-area electron transparent
membranes for microscopic analysis are prepared by ion-beam thinning or
chemical etching from the substrate side, and the top surface of the
ultrathin Fe film is protected by a thin Cr layer. Analysis of the Fe
2p, Cr 2p, and O 1s absorption spectra confirms that only the Cr layer
is oxidized. The local magnetic moments of the ultrathin Fe films are
deduced from the ``white line'' branching ratio in the Fe 2p absorption
spectra. For Fe films as thin as 150 Å, the magnetic moment is not
different from that found in bulk alpha-Fe. For a 70-Å Fe film, the
local magnetic moment is enhanced although the average magnetization is
reduced. As doping is suspected to be the cause for the departure from
bulk alpha-Fe properties. In the case where the 50-Å film is
polycrystalline and discontinuous, spatially resolved EELS has been used
to distinguish small island clusters from large crystalline particles.
The large particles are alpha-Fe crystallites and the islands are
probably also heavily affected by As doping. Journal of Applied Physics
is copyrighted by The American Institute of Physics.


doi: <http://ojps.aip.org/jhtml/doi.jsp>10.1063/1.356950
PACS: 75.70.Ak, 82.80.Pv, 68.55.Jk        Additional Information
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