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      Journal of Applied Physics -- April 1, 1992 -- Volume 71, Issue 7,
      pp. 3283-3293

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      Interfacial roughness correlation in multilayer films: Influence
      of total film and individual layer thicknesses

    D. E. Savage, N. Schimke, Y.-H. Phang, and M. G. Lagally Department
    of Materials Science and Engineering, University of
Wisconsin-Madison, Madison, Wisconsin 53706

(Received 28 October 1991; accepted 28 December 1991)

A series of W/C multilayer films sputter deposited on Si(100) substrates
with total thickness ranging from 400 to 6400 Å and bilayer period from
20 to 160 Å were examined to explore the variation of interfacial
roughness and interfacial roughness correlation with film thickness and
period. The films were characterized with x-ray diffractometry. Average
interfacial roughness is obtained from conventional (theta,2theta)
scans, while information on roughness correlation is extracted from
rocking-curve (transverse-profile) analysis. The magnitude of the
roughness is found to depend more on bilayer period than on total film
thickness. The observations suggest that interfaces retard the evolution
of surface roughness and that thin ``restarting'' layers may be used to
control the growth morphology of thin films. Journal of Applied Physics
is copyrighted by The American Institute of Physics.


doi: <http://ojps.aip.org/jhtml/doi.jsp>10.1063/1.350976
PACS: 68.65.+g, 68.55.Jk, 61.10.Lx        Additional Information
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