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Applied Physics Letters -- May 11, 1992 -- Volume 60, Issue 19 pp. 2436-2438

Giant magnetoresistance dependence on Ar acceleration voltage in Co₉Fe/Cu and Co₃Fe/Cu multilayers

Y. Saito, S. Hashimoto, and K. Inomata

Toshiba Corporation Research and Development Center, Saiwai-ku, Kawasaki 210, Japan

(Received 6 December 1991; accepted 28 February 1992)

In relation to theoretical predictions on the importance of randomness at the interface to determine the cause for giant magnetoresistance, argon acceleration voltage (V_B) in ion beam sputtering was changed for preparing a set of Co_xFe_1–x/Cu multilayers. We found that the magnetoresistance as quite sensitive to the argon acceleration voltage and had a maximum around V_B=600 V. Perfect antiferromagnetic coupling of the Co_xFe_1–x layers via thin Cu layers and the oscillation behavior of this indirect exchange coupling with a 12 Å period were observed for V_B=600 V. These results suggest the importance of the interface state for giant magnetoresistance in multilayers. We also found that a small saturation field can be induced, which can be explained by the metamagnetic transition associating the relation of K_uJ/t_CoFe. Applied Physics Letters is copyrighted by The American Institute of Physics.

DOI: 10.1063/1.106997
PACS: 75.70.-i, 81.15.Cd, 73.50.Jt        Additional Information