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Phys. Rev. B 45, 13607–13613 (1992)

[Issue 23 – 15 June 1992 ]

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Experimental evidence for quantum-size-effect fine structures in the resistivity of ultrathin Pb and Pb-In films

M. Jalochowski

Institute of Physics, Maria Curie-Skl/odowska University, Pl. M. Curie-Skl/odowskiej 1, PL-20-031 Lublin, Poland

E. Bauer, H. Knoppe, and G. Lilienkamp

Physikalisches Institut, Technische Universität, Clausthal, D-3392 Clausthal-Zellerfeld, Federal Republic of Germany

The resistivity of ultrathin single-crystalline Pb and Pb-In layers with thicknesses d smaller than the bulk mean free path l, is measured during deposition onto Si(111)-(6 x 6)Au surfaces at about 110 K. The structure of the layers is monitored by reflection high-energy electron diffraction (RHEED). Oscillations of the RHEED specular beam intensity are highly correlated with fine structures of the resistivity. The quantum-size-effect theory is used for a quantitative analysis of the data. The fine structure, volume impurities, small-scale roughness, and large-scale thickness fluctuations are taken into account. The impact of the layer-by-layer growth mode of ultrathin metal films on the thickness dependence of the resistivity is discussed.

©1992 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v45/p13607
DOI: 10.1103/PhysRevB.45.13607
PACS: 73.20.Dx, 73.60.Aq, 68.55.Jk, 68.55.Bd

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