Appl. Phys. Lett. 51 (23) [7 Dec. 1987] pp 1895-1897 

Electrical and structural characterization of ultrathin epitaxial CoSi_2 
on Si(111)

Julia M. Phillips, J. L. Batstone, J. C. Hensel, and M. Cerullo

We report the fabrication of epitaxial CoSi_2 layers on Si(111) as thin as 
1 nm. The crystalline lattice of these layers is coherent with the Si 
lattice, and the silicide is electrically continuous. There are pronounced 
structural differences between films which are less than 3 nm thick and 
those which are thicker. The resistivity of the layters increases sharply 
with decreasing thickness. This is the first report on growth of coherent, 
electrically continous CoSi_2 layers on Si.