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Phys. Rev. B 31, 5348–5354 (1985)

[Issue 8 – 15 April 1985 ]

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Critical development stages for the reactive Cr-GaAs(110) interface

J. H. Weaver, M. Grioni, and J. Joyce

Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455

High-resolution synchrotron radiation photoemission studies provide a detailed microscopic view of reactions at a refractory-metal/GaAs interface. Core-level and valence-band results indicate weak interaction between the Cr adlayer and the substrate at low coverage, i.e., no reaction products are observed although the Fermi level is pinned by ~1 A-ring. Instead, a metastable Cr overlayer forms and, at a critical coverage of ~2 A-ring, it triggers extensive substrate disruption. A model is presented to account for the reaction onset. Between ~2 and ~8 A-ring the morphology changes rapidly, corresponding to atomic intermixing and formation of Cr–Ga and Cr–As bonds. Arsenic out-diffuses readily through the intermixed region and is present in chemical states corresponding to a Cr-As phase and surface-segregated As. Gallium out-diffuses very little, but it too forms a Cr-Ga phase. At coverages of ~50 A-ring the valence bands are dominated by Cr d states and resemble those of Cr metal, but core studies show that arsenic is still present in substantial quantities (~20% of original level).

©1985 The American Physical Society

URL: http://link.aps.org/abstract/PRB/v31/p5348
DOI: 10.1103/PhysRevB.31.5348
PACS: 68.30.+z, 68.45.Da, 79.60.Cn

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