Appl. Phys. Lett. 39 (5) pp 397-399

Molecular beam epitaxial growth of single-crystal Fe films on GaAs

G. A. Prinz and J. J. Krebs

Molecular beam epitaxy methods have been used to grow good quality 
magnetic single-crystal films of bcc Fe on fcc GaAs substrates. These 
films were characterized by Auger, reflection high energy difraction 
(RHEED) and ferromagnetic resonance (FMR) techniques. Both RHEED and FMR 
indicate that the best crystal quality occurs for substrate temperatures 
in the 175-225 oC range. For 200-angstrom films the Fe surface lattice 
constant agrees with that of bulk alpha-Fe.