Scitation Home | AIP Journal Center | Article Purchases | Table of Contents Alert | Feedback Help | Exit JAP Home Volume: Page/Article: Search Browse Your access to J. Appl. Phys. is provided through the subscription of Central Research Institute. [ Previous / Next Abstract | Issue Table of Contents | Bottom of Page <#bottom> ] Journal of Applied Physics -- May 1, 2003 -- Volume 93, Issue 9, pp. 5514-5518 * Full Text: * [ HTML Sectioned HTML PDF (92 kB) GZipped PS ] Order ------------------------------------------------------------------------ Permissions for Reuse Influence of the Ar-ion irradiation on the giant magnetoresistance in Fe/Cr multilayers M. Kopcewicz / Institute of Electronic Materials Technology, 01-919 Warsaw, Poland / F. Stobiecki / Institute of Molecular Physics, Polish Academy of Sciences, 60-179 Pozna, Poland / J. Jagielski / Institute of Electronic Materials Technology, 01-919 Warsaw, Poland / B. Szymaski , M. Schmidt , and J. Dubowik / Institute of Molecular Physics, Polish Academy of Sciences, 60-179 Pozna, Poland / J. Kalinowska / Institute of Electronic Materials Technology, 01-919 Warsaw, Poland / (Received 14 August 2002; accepted 17 January 2003) The^ influence of 200 keV Ar-ion irradiation on the interlayer coupling^ in Fe/Cr multilayers exhibiting the giant magnetoresistance (GMR) effect is^ studied by the conversion electron Mössbauer spectroscopy (CEMS), vibrating sample^ magnetometer hysteresis loops, magnetoresistivity, and electric resistivity measurements and supplemented^ by the small-angle x-ray diffraction. The increase of Ar-ion dose^ causes an increase of interface roughness, as evidenced by the^ increase of the Fe step sites detected by CEMS. The^ modification of microstructure induces changes in magnetization reversal indicating a^ gradual loss of antiferromagnetic (AF) coupling correlated with the degradation^ of the GMR effect. Distinctly weaker degradation of AF coupling^ and the GMR effect observed for irradiated samples with a^ thicker Cr layer thickness suggest that observed effects are caused^ by pinholes creation. The measurements of temperature dependence of remanence^ magnetization confirm increase of pinhole density and sizes during implantation.^ Other effects which can influence spin dependent contribution to the^ resistance, such as interface roughness as well as shortening of^ mean-free path of conduction electrons, are also discussed. ©/2003 American^ Institute of Physics./ ^ ^ doi: 10.1063/1.1559640 * PACS:* 75.70.Cn, 75.47.De, 61.80.Jh, 75.50.Bb, 75.50.Ee, 68.65.Ac, 61.82.Bg, 75.30.Et, 76.80.+y, 75.60.Ej, 68.35.Ct, 75.60.Jk Additional Information View ISI's Web of Science data for this article: [ Source Abstract | Related Articles ] ------------------------------------------------------------------------ * Full Text: * [ HTML Sectioned HTML PDF (92 kB) GZipped PS ] Order ------------------------------------------------------------------------ References Citation links [e.g.,_ Phys. Rev. D 40, 2172 (1989)_] go to online journal abstracts. 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