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Phys. Rev. B 65, 054408 (2002)
(8 pages)
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(Received 19 August 2001; published 3 January 2002)
The temperature dependence of the electrical resistivity and magnetoresistance of Xe-ion-beam-sputtered Fe-Cr multilayers has been investigated. The electrical resistivity between 5 and 300 K in the fully ferromagnetic state, obtained by applying a field beyond the saturation field (Hsat) necessary for the antiferromagnetic- (AF-) ferromagnetic (FM) field-induced transition, shows evidence of spin-disorder resistivity as in crystalline Fe and an s-d scattering contribution (as in 3d metals and alloys). The sublattice magnetization m(T) in these multilayers has been calculated in terms of the planar and interlayer exchange energies. The additional spin-dependent scattering (T) =
(T,H = 0)AF
(T,H = Hsat)FM in the AF state over a wide range of temperature is found to be proportional to the sublattice magnetization, both
(T) and m(T) reducing along with the antiferromagnetic fraction. At intermediate fields, the spin-dependent part of the electrical resistivity [
s(T)] fits well to the power law
s(T) = bcT
where c is a constant and b and
are functions of H. At low fields
2 and the intercept b decreases with H much the same way as the decrease of
(T) with T. A phase diagram (T vs Hsat) is obtained for the field-induced AF-to-FM transition. Comparisons are made between the present investigation and similar studies using dc-magnetron-sputtered and molecular-beam-epitaxy-grown Fe-Cr multilayers.
©2002 The American Physical Society
URL: http://link.aps.org/abstract/PRB/v65/e054408
doi:10.1103/PhysRevB.65.054408
PACS:
75.50.Bb, 75.50.Ee, 72.15.Eb, 72.15.Gd
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