Journal of Magnetism and Magnetic Materials
Volume 240, Issues 1-3
,
February 2002,
Pages 321-324
doi:10.1016/S0304-8853(01)00797-1 
Copyright © 2002 Elsevier Science B.V. All rights reserved.
Effect of roughness on the magnetic structure of ferro/antiferromagnetic interface
O. K. Dudko
, 
and A. S. 
Kovalev
Institute for Low Temperature Physics and Engineering, 61103 Kharkov, Ukraine
Available online 17 October 2001.
Abstract
Spin structures at the ferro/antiferromagnetic interfaces perturbed by defects such as atomic high steps are analytically investigated. A two-dimensional model is proposed to describe the spin distribution formed on the interfacial step at the domain wall. A criterion of the domain wall configuration relative to the interface is found, defined by the magnetic and geometrical characteristics of the interface and the magnet.
Author Keywords: Anisotropy – single ion; Domain wall-structure; Interface roughness; Layered Heisenberg systems
(4K)
Fig. 1. DW caused by a step on FM/AFM interface given single-ion anisotropy in the easy plane (
xz).
Corresponding author. School of Chemistry, Sackler Faculty of Exact Sciences, Tel Aviv University, Ramat Aviv, 69978 Tel Aviv, Israel. Fax: +972-3-6409293; email: dudko@post.tau.ac.il
