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Giant magnetoresistance and structural properties in Co/Cu/Co sandwiches with Si and Cr buffer layers

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Thin Solid Films

Volume 375, Issues 1-2
31 October 2000
Pages 55-58

PII: S0040-6090(00)01180-9
Copyright © 2000 Elsevier Science S.A. All rights reserved.

Hong-Lie Shen ^,, Guan-Xiong Li, Qin-Wo Shen, Tie Li and Shi-Chang Zou

State Key Laboratory of Functional Materials for Informatics and State Key Laboratories of Transducer Technology, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, PR China

Received 16 June 1999; revised 3 December 1999; accepted 3 December 1999. Available online 16 October 2000.

Cobalt 5.5 nm/Cu 3 nm/Co 5.5 nm sandwiches with Si and Cr buffer layers were prepared by ultra-high vacuum electron beam evaporation. A large in-plane anisotropy of the giant magnetoresistance (GMR) effect was found in Si buffered sandwiches when the buffer layer thickness was equal to or larger than 0.9 nm. In the easy axis, the GMR effect reached a value of 5.5% with a high field sensitivity of approximately 0.7%/Oe, while in Cr-buffered Co/Cu/Co sandwiches, the GMR effect showed only in-plane isotropic properties with a maximum GMR value of 6%. The XRD spectrum and HRTEM image revealed that there exists a Co₂Si compound between the Si buffer and the lower Co magnetic layer. All these results indicate that the anisotropic GMR effect in Si-buffered sandwiches results from the cobalt silicide between the Si buffer and the lower Co magnetic layer.

Author Keywords: Giant magnetoresistance; Co/Cu/Co sandwich; Buffer layer; Anisotropy

1. Introduction
2. Experiment
3. Results and discussion
4. Conclusions
Acknowledgements
References

(6K)
Fig. 1. The magnetoresistance curves for Si(100)/Si 1.5 nm/Co 5.5 nm/Cu 3 nm/Co 5.5 nm with (a)

=0° and (b)

=90°.

(6K)
Fig. 2. Normalized hysteresis loops for Si(100)/Si t_Si/Co 5.5 nm/Cu 3 nm/Co 5.5 nm with t_Si=1.5 nm (a) and 0.6 nm (b).

is the angle between field H and easy axis.

(5K)
Fig. 3. The magnetoresistance curve and normalized hysteresis loop for Si(100)/Cr 8 nm/Co 5.5 nm/Cu 3 nm/Co 5.5 nm.

(4K)
Fig. 4. The high-angle XRD patterns for sandwiches Si(100)/Si t_Si/Co 5.5 nm/Cu 3 nm/Co 5.5 nm with t_Si=0, 0.6 and 1.5 nm and sandwich Si(100)/Cr 8 nm/Co 5.5 nm/Cu 3 nm/Co 5.5 nm.

(22K)
Fig. 5. Cross-sectional HRTEM image of sandwich Si(100)/Si 5 nm/Co 5.5 nm/Cu 3 nm/Co 5.5 nm.

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Corresponding author. Tel.: +86-21-6251-1070; fax: +86-21-6251-3510; email: hlshen@itsvr.sim.ac.cn

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Thin Solid Films
Volume 375, Issues 1-2
31 October 2000
Pages 55-58

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