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Acta Materialia

Volume 48, Issue 1
1 January 2000
Pages 239-251

PII: S1359-6454(99)00297-9
Copyright © 2000 Acta Metallurgica Inc. Published by Elsevier Science Ltd.

Layered magnetic structures in research and application*1

P. Grünberg

Forschungszentrum Jülich-IFF, 52425 Jülich, Germany

Received 1 June 1999; accepted 15 July 1999. Available online 24 January 2000.

Abstract

An overview is given on the status of research and applications in the field of layered magnetic structures and the historical development is indicated. Currently the research on interlayer exchange coupling, giant magnetoresistance and tunnel magnetoresistance is particularly active, therefore the basic understanding of these phenomena, the size of the effects, important issues and applications are discussed in some more detail.

Author Keywords: Layered magnetic structures and superlattices; Magnetoresistive effects; Ferromagnetic hysteresis; Interlayer exchange coupling

Article Outline

1. Historical introduction
2. Interlayer exchange coupling
2.1. Phenomenological description, definition of parameters
2.2. Representative experimental examples
2.3. A physical picture for the origin of the coupling mediated by metal electrons
2.4. Interlayer materials dependence
3. Giant magnetoresistance (GMR)
3.1. First observations
3.2. Microscopic origin
3.3. Bulk vs interface scattering
3.4. Electron reflection at outer surfaces
4. Tunnel magnetoresistance (TMR)
5. Applications
6. Conclusions
Acknowledgements
References


 (35K)
Fig. 1. Illustration of two types of interlayer coupling, depending on the nature of the interlayer. Ferromagnetic films are indicated by dark greytone and interlayers by light greytone. (a) Interlayer is assumed to display no static magnetic order. (b) Static order in the interlayer is assumed, here with antiferromagnetic alignment of successive monolayers. The magnetization M1 in both (a) and (b) is assumed to point upwards. Due to the coupling the magnetization M2 can show the basic alignments parallel, antiparallel or perpendicular with respect to M1.

(24K)
Fig. 2. Remagnetization curves from (a), (b) Fe/Al/Fe layered structures and from (c), (d) Fe/Mn/Fe structures, measured by means of the magneto-optic Kerr effect. The curves in (c) and (d) have been evaluated both on the basis of (1) and (2). The corresponding parameters J1, J2, C1, C2 are indicated.

(28K)
Fig. 3. Strength of interlayer exchange coupling in (a) Fe/Au/Fe and in (b) Fe/Mn/Fe. Negative values in (a) correspond to antiferromagnetic- or 90°-type coupling. An enhanced view of the latter is shown in the inset.

(51K)
Fig. 4. (a) A layered magnetic structure with parallel and antiparallel magnetization alignment and the propagation of electron waves with spin up and down. For parallel alignment the wave with spin down is confined and forms a standing wave. (b) The reason for the various reflectivities, taking schematic band structures for magnetic 3d metals and noble metals as interlayers as examples. (c) Two stationary vectors, q(1) and q(2), in the [100] direction are shown, taking the Au Fermi surface as an example.

(12K)
Fig. 5. GMR effect in a multilayer (A) and a double layer (B) of Fe interspaced by Cr. (B) The AMR effect in a single film of Fe with thickness 250 Å is also shown for comparison.

(9K)
Fig. 6. Remagnetization curve (A) and GMR effect (B) in a Co(100 Å)/Au(60 Å)/Co(100) structure with a hard and a soft Co film.

(30K)
Fig. 7. Electron scattering in magnetic double layers with parallel (left) and antiparallel (right) magnetization alignment. Spin-independent scattering is assumed in the bulk and spin-dependent scattering at the interfaces.

(17K)
Fig. 8. TMR effect in a Co/Al/NiFe sample. A cross section of the structure is shown in the inset.

(7K)
Fig. 9. Schematic arrangement for the measurement of the current distribution in a lead, suitable for testing integrated circuits.

(9K)
Fig. 10. Layered magnetic structure, including an "artificial antiferromagnet" (AAF, white arrows), for monitoring the angle of rotation of an object via the GMR effect. The GMR effect occurs between the detection layer (black arrow) and the upper film of the AAF. The response of the sensor to the rotation of the permanent magnet is shown on the right-hand side.

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*1 The Millennium Special Issue ¯¯ A Selection of Major Topics in Materials Science and Engineering: Current status and future directions, edited by S. Suresh.
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Acta Materialia
Volume 48, Issue 1
1 January 2000
Pages 239-251


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