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J. Magnetism and Magnetic Materials, Vol. 210 (1-3) (2000) pp. 341-348
© 2000 Elsevier Science B.V. All rights reserved.
PII: S0304-8853(99)00698-8

Magnetization reversal asymmetry in Fe/MgO(001) thin films

J.L. Costa-Krämer a * kramer@imm.cnm.csic.es, J.L. Menéndez a, A. Cebollada a, F. Briones a, D. García b and A. Hernando b

a Centro Nacional de Microelectrónica-IMM (CSIC), Isaac Newton 8 (PTM), Tres Cantos, Madrid 28760, Spain
b Instituto de Magnetismo Aplicado, P.O. Box 155, 28230 Las Rozas, Madrid, Spain

Received 20 May 1999; received in revised form 13 September 1999

Abstract

We study the in-plane magnetization process in 200Å Fe(001) thin films grown by sputtering at normal incidence. In spite of this growth geometry, a small uniaxial in plane magnetic anisotropy, whose origin is not totally understood, is found superimposed to the expected cubic biaxial one. This has a dramatic effect both on the reversal process and the domain structure. A combined longitudinal and transversal Kerr study shows the different switching processes (180° walls along the main easy axis versus 90° along the secondary easy axis) depending on the relative orientation of the magnetic field with respect to the Fe crystallographic axes. Remarkably, this two- and sometimes three-step switching process appears only when the field is applied along certain crystallographic directions. These findings are corroborated by domain observations.

PACS: 81.15.Cd; 75.70.Ak; 75.70.Kw

Keywords: Thin films; Fe; Domains; Anisotropy; Sputtering

*Corresponding author. Tel.: 34-91-8060700; fax: 34-91-8060701

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